Analysis of Stochastic Effect in Line-and-Space Resist Patterns Fabricated by Extreme Ultraviolet Lithography

• DOI: 10.7567/apex.6.026502
• Publication Date: 2013-01-24T01:35:48Z
• Authors: Takahiro Kozawa; Julius Joseph San...; Toshiro Itani
• Keywords: Extreme Ultraviolet Lithography; Extreme ultraviolet; Next-generation lithography; Ultraviolet

Extreme ultraviolet (EUV) lithography is promising for the high-volume production of semiconductor devices 16 nm node and below. However, stochastic effect a significant concern in using high-energy (92.5 eV) photons highly sensitive resists. In this study, we report technique evaluating on line edge roughness (LER). Resist patterns were analyzed Monte Carlo simulation basis sensitization reaction mechanisms chemically amplified EUV The contribution protected unit fluctuation to LER was estimated be ±0.31 ±0.37σ.