Single-Atomic-Level Probe of Transient Carrier Dynamics by Laser-Combined Scanning Tunneling Microscopy

• DOI: 10.7567/apex.6.032401
• Publication Date: 2013-03-16T13:22:56Z
• Authors: Shoji Yoshida; Munenori Yokota; Osamu Takeuchi; Haruhiro Oigawa; Yutaka Mera; Hidemi Shigekawa
• Keywords: 02 engineering and technology; 0210 nano-technology

The first application of laser-combined time-resolved scanning tunneling microscopy (STM) to single-atomic-level analysis was demonstrated. dynamics photoinduced holes, transiently trapped at the surface and recombined with electrons from STM tip in-gap states associated single-(Mn,Fe)/GaAs(110) structures, successfully probed on atomic level for time. In addition, light-modulated spectroscopy (LT-STS) performed energy–space in conjunction measurement shown useful developing techniques further advances.