High-performance GaAs-based metal–oxide–semiconductor heterostructure field-effect transistors with atomic-layer-deposited Al2O3gate oxide and in situ AlN passivation by metalorganic chemical vapor deposition

• DOI: 10.7567/apex.7.106502
• Publication Date: 2014-09-11T08:13:30Z
• Authors: Takeshi Aoki; Noboru Fukuhara; Takenori Osada; Hiroyuki Sazawa; Masahiko Hata; Takayuki Inoue
• Keywords: 0103 physical sciences; 7. Clean energy; 01 natural sciences

GaAs-based metal–oxide–semiconductor heterostructure field-effect transistors (MOSHFETs) with Al2O3 gate oxide and in situ AlN passivation were investigated. Passivation with AlN improved the quality of the MOS interfaces, leading to good control of the gate. The devices had a sufficiently small subthreshold swing of 84 mV decade−1 in the drain current vs gate voltage curves, as well as negligible frequency dispersions and nearly zero hysteresis in the gate capacitance vs gate voltage curves. A maximum drain current of 630 mA/mm and a peak effective mobility of 6720 cm2 V−1 s−1 at a sheet carrier density of 3 × 1012 cm−2 were achieved.