Analysis of efficiency droop in 280-nm AlGaN multiple-quantum-well light-emitting diodes based on carrier rate equation

• DOI: 10.7567/apex.8.022104
• Publication Date: 2015-01-22T09:13:14Z
• Authors: Joosun Yun; Jong-In Shim; Hideki Hirayama
• Keywords: Quantum Efficiency; Auger effect; Ultraviolet; Rate equation

The efficiency droop in 280-nm AlGaN multiple-quantum-well (MQW) ultraviolet (UV) light-emitting diodes (LEDs) is analyzed using the carrier rate equation. It shown that internal quantum (ηIQE), injection (ηinj), light-extraction (ηLEE), Shockley–Read–Hall recombination coefficient (A), and Auger (C) can be determined by equation theoretical radiative (B), experimentally measured wavelength spectrum, external (ηEQE). results show spillover from MQWs to p-AlGaN layer main cause of droop.