Dark current suppression in metamorphic In0.83Ga0.17As photodetectors with In0.66Ga0.34As/InAs superlattice electron barrier

• DOI: 10.7567/apex.8.022202
• Publication Date: 2015-01-15T10:13:17Z
• Authors: Yi Gu; Li Zhou; Yonggang Zhang; Xingyou Chen; Yingjie Ma; Suping Xi; Haosibaiyin Li
• Keywords: 0103 physical sciences; 01 natural sciences

We report on InP-based metamorphic In0.83Ga0.17As photodetectors with dramatically suppressed dark currents by inserting a strain-compensated In0.66Ga0.34As/InAs superlattice electron barrier in the absorption layer. Compared reference detector without barrier, device showed that current is reduced about half at room temperature and more than two orders of magnitude 77 K low bias, while responsivity remained unchanged. The generation recombination tunneling are significantly suppressed, remains diffusion-current-limited above 175 K. density −10 mV to 3.95 nA/cm2