High-performance irreversibility field and flux pinning force density in BaHfO3-doped GdBa2Cu3Oytape prepared by pulsed laser deposition

• DOI: 10.7567/apex.8.023101
• Publication Date: 2015-01-15T10:13:16Z
• Authors: Satoshi Awaji; Yutaka Yoshida; Takumi Suzuki; Kazuo Watanabe; Kazuyoshi Hikawa; Yusuke Ichino; Teruo Izumi
• Keywords: 0103 physical sciences; 01 natural sciences

The high irreversibility field Bi and strong flux pinning force were obtained for BaHfO3-doped GdBa2Cu3Oy tapes on a metallic Hastelloy substrate with an ion beam-assisted deposition MgO buffer layer. At 77.3 K, Bi of 15.8 T and the maximum flux pinning force density of 23.5 GN/m3 for B ∥ c were achieved for the 1.5 vol % BaHfO3-doped GdBa2Cu3Oy tape, which are the world's highest recorded values for REBa2Cu3Oy-coated conductors on metallic substrates (RE = rare earth). From the flux pinning analysis, the c-axis correlated pinning by well-aligned BaHfO3 nanorods plays an important role in achieving the high irreversibility field and flux pinning force density performance.