Electronic properties of diamond Schottky barrier diodes fabricated on silicon-based heteroepitaxially grown diamond substrates

• DOI: 10.7567/apex.8.104103
• Publication Date: 2015-09-16T08:13:30Z
• Authors: Hiroyuki Kawashima; Hitoshi Noguchi; Tsubasa Matsumoto; Hiromitsu Kato; Masahiko Ogura; Toshiharu Makino; Shozo Shirai; Daisuke Takeuchi; Satoshi Yamasaki
• Keywords: 0103 physical sciences; 01 natural sciences

Diamond Schottky barrier diodes (SBDs) were fabricated on silicon-based heteroepitaxially grown diamond substrates. Platinum metal and boron-doped p-type used as SBDs. The exhibited good current–voltage (I–V) characteristics. rectification ratio was over 1012 at ±4 V, the ideality factor 1.2. breakdown voltage estimated metal/diamond interface high ∼1 MV/cm, which is greater than material limit of silicon (∼0.3 MV/cm). This achievement, does not require use single-crystalline substrates, will accelerate development electronic industry.