Electronic properties of diamond Schottky barrier diodes fabricated on silicon-based heteroepitaxially grown diamond substrates

• DOI: 10.7567/apex.8.104103
• Publication Date: 2015-09-16T08:13:30Z
• Authors: Hiroyuki Kawashima; Hitoshi Noguchi; Tsubasa Matsumoto; Hiromitsu Kato; Masahiko Ogura; Toshiharu Makino; Shozo Shirai; Daisuke Takeuchi; Satoshi Yamasaki
• Keywords: 0103 physical sciences; 01 natural sciences

Diamond Schottky barrier diodes (SBDs) were fabricated on silicon-based heteroepitaxially grown diamond substrates. Platinum Schottky metal and boron-doped p-type diamond were used as SBDs. The diodes exhibited good current–voltage (I–V) characteristics. The rectification ratio was over 1012 at ±4 V, and the ideality factor was 1.2. The breakdown voltage estimated at the metal/diamond interface was as high as ~1 MV/cm, which is greater than the material limit of silicon (~0.3 MV/cm). This achievement, which does not require the use of single-crystalline diamond substrates, will accelerate the development of the diamond electronic industry.