Demonstration of InGaN-based orange LEDs with hybrid multiple-quantum-wells structure

• DOI: 10.7567/apex.9.111003
• Publication Date: 2016-10-12T06:14:22Z
• Authors: Daisuke Iida; Kazumasa Niwa; Satoshi Kamiyama; Kazuhiro Ohkawa
• Keywords: Quantum Efficiency; Vapor phase

Abstract We demonstrate the effectiveness of a hybrid multiple-quantum-wells (MQWs) structure in InGaN-based orange light-emitting diodes (LEDs) grown by metalorganic vapor phase epitaxy. The MQWs-LED is composed InGaN double QWs and blue-green single QW. Using MQWs structure, LEDs exhibited electroluminescence spectra with narrow full widths at half maximum 51 nm 20 mA. light output power external quantum efficiency were 0.23 mW 0.6%, respectively,