Interface Nature of Ordered Thermally Oxidized Si Nanowires Probed by Electron Spin Resonance: Post Fabrication Annealing and Irradiation

• DOI: 10.7567/jjap.52.041301
• Publication Date: 2013-03-15T15:13:30Z
• Authors: Mihaela Jivānescu; Andre Stesmans; Rufi Kurstjens; Frédéric Dross
• Keywords: Passivation; Thermal oxidation; Electron beam processing

Extensive low-temperature ( T ) electron spin resonance studies (ESR) have been carried out on as-fabricated, vacuum annealed, and irradiated single crystalline arrays of Si nanowires (NWs) with a top diameter 5 nm produced by down etching into (100)Si, finally thinned high- oxidation. This reveals the presence substantial inherent density P b0 (Si 3 ≡Si • interface defects (charge trapping recombination centers) quite above standard thermal values, leaving NW-Si/SiO 2 interfaces reduced electrical quality with, consequently, negative influence efficiency passivation H. The appears limited wire-narrowing oxidation procedure. Vacuum annealing (≈610 °C) is found to generally reduce, more or lesser extent, common value over all samples studied, which result directly counters inadvertent Rather, anneal effectuate some healing. Short term (\lesssim2 h) UV VUV (10.02 eV) irradiation has little effect in general, perhaps weak increase b1 induced photons. On basis observed E' γ defect properties, chemical vapor deposited NW inter space filling oxide (200 be OH enriched.