Low Threshold Current Density Operation of a GaInAsP/Si Hybrid Laser Prepared by Low-Temperature N2 Plasma Activated Bonding

• DOI: 10.7567/jjap.52.060202
• Publication Date: 2013-05-20T02:31:56Z
• Authors: Yusuke Hayashi; Ryo Osabe; Keita Fukuda; Yuki Atsumi; JoonHyun Kang; Nobuhiko Nishiyama; Shigehisa Arai
• Keywords: 0103 physical sciences; 530; 01 natural sciences; 7. Clean energy

The integration of III–V active devices on a Si platform utilizing direct bonding is an attractive way to realize large-scale photonic integrated circuits. Because plasma activated bonding (PAB) is expected to have a higher bonding strength at a lower heating temperature as compared to conventional bonding methods, PAB is attractive for the reduction of non-radiative recombination centers in the III–V active region caused by thermal expansion during the bonding process. A GaInAsP/Si hybrid laser was fabricated with low-temperature (150 °C) N2 PAB, and a low threshold current density of 850 A/cm2 (170 A/cm2 per quantum well) was obtained.