Preparation of Bulk AlN Seeds by Spontaneous Nucleation of Freestanding Crystals

• DOI: 10.7567/jjap.52.08ja06
• Publication Date: 2013-05-31T06:33:53Z
• Authors: Carsten Hartmann; Juergen Wollweber; Andrea Dittmar; Klaus Irmscher; Albert Kwasniewski; Frank Langhans; Tom Neugut; Matthias Bickermann
• Keywords: Facet (psychology); Crystal (programming language)

Freestanding AlN single crystals are grown in a RF-heated furnace by physical vapor transport (PVT). Three different growth regimes with temperatures between 2080–2200°C result crystal habits and very high structural quality. The Rocking curves show FWHM < 21 arcsec the 0002 101̄0 Reflection on as-grown facets. Isometric sizes up to 10 × 12mm 3 zonar structure consisting of yellowish core area which is N-polar (0001̄) facet nearly colorless edge region prismatic {101̄0} In two zones same C concentrations but amounts O Si measured secondary ion mass spectrometry (SIMS). low defect density (EPD ⩽ 100 cm −2 ) higher deep UV transparency compared region.