Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions

• DOI: 10.7567/jjap.52.08jk12
• Publication Date: 2013-10-23T06:57:49Z
• Authors: Yuka Kuwano; Mitsuru Kaga; Takatoshi Morita; Kouji Yamashita; Kouta Yagi; Motoaki Iwaya; Tetsuya Takeuchi; Satoshi Kamiyama; Isamu Akasaki
• Keywords: Tunnel junction

We demonstrated lateral Mg activation along p-GaN layers underneath n-GaN surface in nitride-based light emitting diodes (LEDs) with GaInN tunnel junctions. A high temperature thermal annealing was effective for the when were partly exposed to an oxygen ambient as etched sidewalls. The activated regions gradually extended from sidewalls centers increase of time, observed emission current injection. These results suggest that hydrogen diffuses not vertically thorough above but laterally through portions p-GaN. lowest voltage drop at junction estimated be 0.9 V 50 mA optimized condition.