Optimization of In0.68Ga0.32As Thermophotovoltaic Device Grown on Compositionally Nonmonotonically Graded InAsP Buffer by Metal–Organic Chemical Vapor Deposition

• DOI: 10.7567/jjap.52.116504
• Publication Date: 2013-11-05T02:41:37Z
• Authors: Ming Tan; Shulong Lu; Lian Ji; Yaqi Zhu; Zhiming Chen
• Keywords: Thermophotovoltaic; Open-circuit voltage; Anti-reflective coating; Deposition

An In 0.68 Ga 0.32 As thermophotovoltaic (TPV) cell on a compositionally nonmonotonically graded InAsP buffer with band gap energy of 0.60 eV grown by metal–organic chemical vapor deposition (MOCVD) has been fabricated. The performance the TPV device was greatly improved optimized material growth, use an absorption layer suitable width, and appropriate TiO 2 /SiO antireflective coating design. Under standard AM1.5G spectra, open circuit voltage ( V oc ) increases from 0.19 to 0.23 V, short-circuit current density J sc 43 56 mA/cm , conversion efficiency 5.31 8.06%. By illumination at high intensity 50 suns, 12.3% 0.35 is reached.