Properties of crystalline In–Ga–Zn-oxide semiconductor and its transistor characteristics

• DOI: 10.7567/jjap.53.04ed18
• Publication Date: 2014-03-31T13:30:37Z
• Authors: Shunpei Yamazaki; Hideomi Suzawa; Koki Inoue; Kiyoshi Kato; Takuya Hirohashi; Kenichi Okazaki; Noboru Kimizuka
• Keywords: Crystal (programming language); Morphology

We report, in this paper, that crystalline In–Ga–Zn-oxide (IGZO) can be formed over an amorphous surface or uneven by a sputtering process at lower than 500 °C through the purification of IGZO. Crystalline IGZO, which no clear grain boundary is observed, shows c -axis alignment but random - and b orientations without alignment. This crystal morphology differs from other morphologies have been known thus far, such as single polycrystal morphologies. Our model for understanding formation [ -axis-aligned (CAAC)] also discussed. Upon thermal annealing deposited film °C, nanocrystal regions remaining CAAC converted into structure. Accordingly, I off yA/µm (10 −24 A/µm) level 85 °C. It has proven utilizing normally-off characteristics even with L / W = 40 nm/40 nm (actual size: 68 nm/34 nm), fabrication three-dimensional (3D) LSI 3D oxide semiconductor/Si hybrid structure feasible.