Investigations on the roles of position controlled Al layers incorporated into an Al-doped ZnO active channel during atomic layer deposition for thin film transistor applications

• DOI: 10.7567/jjap.55.03cc03
• Publication Date: 2016-02-10T09:13:34Z
• Authors: Eom-Ji Kim; Won-Ho Lee; Sung-Min Yoon
• Keywords: Deposition; Active layer

Abstract We investigated the effects of distance between incorporated Al layers on characteristics thin-film transistors (TFTs) using Al-doped ZnO (AZO) as active channels. The intervals were controlled by designing sequences cycles during atomic-layer deposition. Two configurations designed “scatter” or “focus”, in which dispersed to bottom and top sides concentrated center region. Electrical conductivities “focus” films observed be different. While could work dopants, a too-close interval suppressed carrier transport, even with same amounts. These differences reflected device characteristics. TFT performance was better than that device. Consequently, adequately AZO channel are very important for improving performance.