Analysis of interface formation mechanism in GaN double-polarity selective-area growth by metalorganic vapor phase epitaxy

• DOI: 10.7567/jjap.55.05fa05
• Publication Date: 2016-04-01T11:13:46Z
• Authors: Kenta Kuze; Noriyuki Osumi; Yohei Fujita; Yoku Inoue; Takayuki Nakano
• Keywords: 02 engineering and technology; 0210 nano-technology

Abstract The fabrication of quasi-phase-matching (QPM) crystals by selective-area growth on the two asymmetrically polar surfaces of GaN is examined. We attempted the fabrication of GaN-QPM crystals by one-time growth using a carbon mask. For GaN double-polarity selective-area growth (DP-SAG), we investigated the effect of varied nitriding times of the Al2O3 templates patterned with the carbon mask. We optimized the nitriding conditions for the DP-SAG process, and evaluated the substrate fabricated by the optimized DP-SAG process. In addition, we examined the interface formation mechanism of DP-GaN fabricated by GaN DP-SAG process. We determined that it is possible to fabricate DP-GaN with a sharp interface by optimizing the growth conditions.