Influences of growth parameters on the film formation of hexagonal boron nitride thin films grown on sapphire substrates by low-pressure chemical vapor deposition

• DOI: 10.7567/jjap.55.05fd09
• Publication Date: 2016-04-20T09:13:37Z
• Authors: Naoki Umehara; Atsushi Masuda; Takaki Shimizu; Iori Kuwahara; Tetsuya Kouno; Hiroko Kominami; Kazuhiko Hara
• Keywords: Hexagonal boron nitride

Abstract Hexagonal boron nitride (h-BN) films were grown on c -plane sapphire substrates by low-pressure chemical vapor deposition with BCl 3 and NH as the nitrogen sources, respectively, influences of growth parameters film quality investigated for samples a thickness about 1 µm. The dependence X-ray diffraction temperature ( T g ) indicated that crystalline is most improved in sample at 1200 °C, which epitaxial relationship {100} h-BN ∥ {110} {001} was confirmed. This condition enhanced lateral growth, resulting formation grains flat top surfaces. discussed relation to amorphous AlN formed substrate surface reaction between phase. correlation structural luminescent properties, found from CL, also discussed.