Clustered quantum dots in single GaN islands formed at threading dislocations
Cathodoluminescence
Threading (protein sequence)
DOI:
10.7567/jjap.55.05ff04
Publication Date:
2016-03-31T09:13:47Z
AUTHORS (7)
ABSTRACT
Abstract We give direct evidence of distinct quantum dot states clustered but also spatially separated in single GaN islands. Resulting from layer growth on top AlN, the islands are predominantly formed close vicinity to threading dislocation bundles. Detailed analysis inner optical and structural properties, performed by nanoscale cathodoluminescence, reveals various sharp emission lines different regions an otherwise continuous island. Thickness fluctuations found within these made responsible for clustering states.
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