Effects of post-annealing and temperature/humidity treatments on the interfacial adhesion energy of the Cu/SiNx interface for Cu interconnects

• DOI: 10.7567/jjap.55.06jd01
• Publication Date: 2016-05-09T09:14:04Z
• Authors: Minsu Jeong; Byung-Hyun Bae; Hyeonchul Lee; Hee-Oh Kang; Wook-Jung Hwang; Jun-Mo Yang; Young-Bae Park
• Keywords: 02 engineering and technology; 0210 nano-technology

Abstract The effects of 200 °C post-annealing and 85 85% relative humidity temperature (T/H) treatments on the interfacial adhesion energy a Cu/SiN x interface were systematically investigated. results four-point bending test, X-ray photoemission spectroscopy, high-resolution transmission electron microscopy revealed that during T/H treatment decreased with time faster than annealing treatment, which is closely related to Cu oxidation SiN /Cu interfaces.