CVD growth of monolayer MoS2: Role of growth zone configuration and precursors ratio

• DOI: 10.7567/jjap.56.06gg05
• Publication Date: 2017-05-08T10:14:09Z
• Authors: Ayberk Özden; Feridun Ay; Cem Sevik; Nihan Kosku Perkgöz
• Keywords: Aspect ratio (aeronautics)

Single-layer, large-scale two-dimensional material growth is still a challenge for their wide-range usage. Therefore, we carried out comprehensive study of monolayer MoS2 by CVD investigating the influence zone configuration and precursors ratio. We first compared two commonly used approaches regarding relative substrate precursor positions, namely, horizontal face-down configurations where approach found to be more favorable obtain larger flakes under identical conditions. Secondly, different types holders investigate Mo S vapor confinement on resulting diffusion environment. suggest that local changes ratio in key factor change shape, size uniformity formations, which also confirmed performing depositions ratios. continuous films, needed kept within certain range throughout substrate. As conclusion, obtained triangles with side length 90 µm circles diameter 500 films an area 850 × 1 cm when S-to-Mo optimized.