Dependences of contraction/expansion of stacking faults on temperature and current density in 4H-SiC p–i–n diodes

• DOI: 10.7567/jjap.57.061301
• Publication Date: 2018-05-02T11:15:48Z
• Authors: Aoi Okada; Johji Nishio; Ryosuke Iijima; Chiharu Ota; Akihiro Goryu; Masaki Miyazato; Mina Ryo; Takashi Shinohe; Masaaki Miyajima; Tomohisa Kato; Yoshiyuki Yonezawa; Hajime Okumura
• Keywords: Bar (unit)

To investigate the mechanism of contraction/expansion behavior Shockley stacking faults (SSFs) in 4H-SiC p–i–n diodes, dependences SSF on temperature and injection current density were investigated by electroluminescence image observation. We both triangle- bar-shaped SSFs at four levels. All this study show similar dependences. found that expansion a high was converted to contraction certain value as decreased is temperature-dependent. It has been confirmed behavior, which considered complex or peculiar, might be explained mainly energy change caused SSFs.