Multi-Level Cell Memory with High-Speed, Low-Voltage Writing and High Endurance Using Crystalline In-Ga-Zn Oxide Thin Film Transistor

• DOI: 10.7567/ssdm.2012.b-1-3
• Publication Date: 2015-09-18T05:44:22Z
• Authors: T. Ishizu; H. Inoue; T. Matsuzaki; S. Nagatsuka; Y. Okazaki; T. Onuki; A. Isobe; Y. Shionoiri; K. Kato; T. Okuda; J. Koyama; S. Yamazaki
• Keywords: 0202 electrical engineering, electronic engineering, information engineering; 02 engineering and technology