Self-Aligned Deposition of Source/Drain Contact Metal with Electrodeposition Technique for High Performance Schottky Barrier Ge MOSFETs Fabrication

• DOI: 10.7567/ssdm.2016.ps-1-05
• Publication Date: 2019-06-21T07:35:02Z
• Authors: D. Zhai; J. Jiang; J. Li; X. Yu; R. Zhang; Y. Zhao
• Keywords: Deposition

2016 International Conference on Solid State Devices and Materials,Self-Aligned Deposition of Source/Drain Contact Metal with Electrodeposition Technique for High Performance Schottky Barrier Ge MOSFETs Fabrication