A5049632562- X-ray Diffraction in Crystallography
- Crystallization and Solubility Studies
- Crystallography and molecular interactions
- GaN-based semiconductor devices and materials
- ZnO doping and properties
- Ga2O3 and related materials
- Chalcogenide Semiconductor Thin Films
- Metal and Thin Film Mechanics
- 2D Materials and Applications
- Nuclear Materials and Properties
- Phase-change materials and chalcogenides
- Intermetallics and Advanced Alloy Properties
- Quasicrystal Structures and Properties
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Tribology and Wear Analysis
- Microstructure and mechanical properties
- Iron-based superconductors research
- Diamond and Carbon-based Materials Research
- Cultural Heritage Materials Analysis
- Fusion materials and technologies
- Liquid Crystal Research Advancements
- Copper-based nanomaterials and applications
- Magnetic Properties of Alloys
- Mineralogy and Gemology Studies
Centre d’Élaboration de Matériaux et d’Études Structurales
2022-2023
Université de Toulouse
2022-2023
Centre National de la Recherche Scientifique
2022-2023
Indian Institute of Science Bangalore
2022
Defence Metallurgical Research Laboratory
2010-2022
International Iberian Nanotechnology Laboratory
2021-2022
Abstract The intercalation of layered compounds opens up a vast space new host–guest hybrids, providing routes for tuning the properties materials. Here, it is shown that uniform and continuous layers copper can be intercalated within van der Waals gap bulk MoS 2 resulting in unique Cu–MoS hybrid. hybrid, which remains semiconducting, possesses plasmon resonance at an energy ≈1eV, giving rise to enhanced optoelectronic activity. Compared with high‐performance photodetectors, copper‐enhanced...
Among the phase-change materials, Ge-rich GeSbTe (GST) alloys are of considerable interest as they offer a much higher thermal stability than their congruent contenders, desirable characteristic for embedded digital memories and neuromorphic devices. Up to now, mechanisms by which such crystallize progressively switch from one resistivity state other remain unclear very controversial. Using in situ synchrotron X-ray diffraction during isothermal annealing advanced transmission electron...
For achieving unified functionalities of rare-earth free materials, the development innovative zinc oxide and β-silicon carbide (ZnO@β-SiC) composites by a solid-state reaction method is presented. The evolution silicate (Zn2SiO4) evidenced X-ray diffraction when annealed in air beyond 700 °C. Detailed photoelectron spectroscopy Fourier transform infrared analyses reveal involvement silicon dioxide forming Zn2SiO4. Transmission electron microscopy associated energy-dispersive elucidate phase...
Among many phase change materials, Ge‐rich GeSbTe (GST) alloys are of considerable interest due to their high thermal stability, a specification required for the next generation embedded digital memories. This stability results from fact that these do not crystallize congruently but experience separation forming Ge and GST‐225 nanocrystals upon crystallization. However, details crystallization process remain unclear. Combining in situ X‐ray diffraction studies during isothermal annealing ex...
Metal-semiconductor interfaces are ubiquitous in modern electronics. These quantum-confined allow for the formation of atomically thin polarizable metals and feature rich optical optoelectronic phenomena, including plasmon-induced hot-electron transfer from metal to semiconductors. Here, we report on metal-semiconductor interface formed during intercalation zero-valent atomic layers tin (Sn) between MoS2, a van der Waals layered material. We demonstrate that Sn interaction leads emergence...
In this study, samples of zircaloy-2 were irradiated with oxygen ion beam (O5+ ions 116 MeV energy) to fluence varying from 1013 1015 ion/cm2. The observed under a transmission electron microscope identify the irradiation-induced defects and phase transformations. Microstructural investigations on these showed presence interstitial ZrO2 precipitates in α (hcp) matrix. alignment appeared facilitate formation samples. Orientation relationship between oxide matrix was determined possible...
Nitridation of sapphire substrates is used as a precursor to the growth GaN films provide wetting layer which closer in terms structure and chemistry overlayer. has been carried out by metal–organic chemical vapor deposition at 530, 800, 1100 °C an environment NH3 H2. The nitrided grown these different temperatures have studied X-ray photoelectron spectroscopy, electron diffraction, high resolution microscopy, energy loss spectroscopy. low temperature nitridation process results oxygen...
<p>In-situ electron microscopy is an emerging technique for real time visualisation of micro-structural changes a specimen under some applied constraints inside microscope. In this study, in-situ nanoindentation experimentation on carbon nanocoil transmission microscope has been reported. The elastic modulus the found to be 177 GPa. Similar experiments are also carried out nanotubes, but force response nanotubes beyond limit sensors presently available. present study reports...
Present study examined the microstructural features, hardness and wear performance of TiAlN, TiCrN n-TiAlN/α-Si3N4 coatings deposited by cathodic arc physical vapour deposition (CA-PVD) technique on M-50 steel keeping in mind a possible application hybrid bearings next generation aero-engine. Microstructural features were evaluated using scanning electron microscopy (SEM) transmission microscopy. Hardness was measured microhardness tester. Wear test carried out with help ‘Bruker’ tribometer....
Abstract GaN films have been grown on SiC substrates with an AlN nucleation layer by using a metal organic chemical vapor deposition technique. Micro-cracking of the has observed in some samples. In order to investigate micro-cracking and microstructure, samples studied various characterization techniques such as optical microscopy, atomic force Raman spectroscopy, scanning electron microscopy transmission (TEM). The surface morphology is related stress evolution subsequent overgrown...
Microstructure evolution of GaN grown on c-sapphire by MOCVD has been systematically studied using transmission electron microscopy based techniques. Individual samples have derived interrupting the growth at various steps, starting from nitridation 530° C, followed standard two step comprising first deposition low temperature nucleation layer (LT-GaN NL) and then ramping up high epilayer growth. Effect nitridation, microstructure nitride for temperatures recently reported our group [1],...