A5103069305- Magnetic properties of thin films
- Magnetic Properties and Applications
- ZnO doping and properties
- Magneto-Optical Properties and Applications
- Ferroelectric and Negative Capacitance Devices
- Metallic Glasses and Amorphous Alloys
- Advanced Memory and Neural Computing
- Theoretical and Computational Physics
- Multiferroics and related materials
- Physics of Superconductivity and Magnetism
- Magnetic Properties and Synthesis of Ferrites
- Machine Learning and ELM
- Quantum and electron transport phenomena
- Neuroscience and Neural Engineering
- Electronic and Structural Properties of Oxides
Nanjing University
2015-2020
Nanjing Institute of Technology
2015-2020
National Laboratory of Solid State Microstructures
2015-2016
Collaborative Innovation Center of Advanced Microstructures
2015
Electric control of exchange bias (EB) is vital importance in energy-efficient spintronics. Although many attempts have been made during the past decade, each has its own limitations for operation and thus falls short full direct reversible electrical EB at room temperature. Here, a novel approach proposed by virtue unipolar resistive switching to accomplish this task Si/SiO2 /Pt/Co/NiO/Pt device. By applying certain voltages, device displays obvious high-resistance-state while negligible...
We demonstrate that a bipolar non-volatile resistive switching behaviour with negative differential resistance (NDR) effect is realized in Cu/BaTiO<sub>3</sub>/Ag device, which was deposited on Si substrate <italic>via</italic> magnetron sputtering equipment.
Laser-induced spin dynamics of in-plane magnetized CoFeB films has been studied by using time-resolved magneto-optical Kerr effect measurements. While the effective demagnetization field shows little dependence on pump laser fluence, intrinsic damping constant found to be increased from 0.008 0.076 with increase in fluence 2 mJ/cm2 20 mJ/cm2. This sharp enhancement shown transient and ascribed heating induced excitation, as is almost unchanged when pump-probe measurements are performed at a...
Abstract Effective control of the domain wall (DW) motion along magnetic nanowires is great importance for fundamental research and potential application in spintronic devices. In this work, a series permalloy with an asymmetric notch middle were fabricated only varying width ( d ) right arm from 200 nm to 1000 nm. The detailed pinning depinning processes DWs these have been studied by using focused magneto-optic Kerr effect (FMOKE) magnetometer, force microscopy (MFM) micromagnetic...
Abstract A 3.5 nm amorphous CoFeB film was sputtered on GaAs (001) wafer substrate without applying magnetic field during deposition, and a significant in-plane uniaxial anisotropy (UMA) ( H u ) of about 300 Oe could be achieved. To precisely determine the intrinsic Gilbert damping constant α this film, both ferromagnetic resonance (FMR) time-resolved magneto-optical Kerr effect (TRMOKE) techniques were utilized. With good fitting dynamic spectra FMR TRMOKE, is calculated to 0.010 0.013,...
Amorphous CoFeB films grown on GaAs(001) substrates demonstrating significant in-plane uniaxial magnetic anisotropy were investigated by vector network analyzer ferromagnetic resonance. Distinct of damping, with a largest maximum-minimum damping ratio about 109%, was observed via analyzing the frequency dependence linewidth in linear manner. As film thickness increases from 3.5 nm to 30 nm, amorphous structure for all is maintained while decreases significantly. In order reveal inherent...
In-plane uniaxial magnetic anisotropy (UMA) has been carefully studied for the same amorphous Co <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">56</sub> Fe xmlns:xlink="http://www.w3.org/1999/xlink">24</sub> B xmlns:xlink="http://www.w3.org/1999/xlink">20</sub> (CoFeB) film deposited on different orientational GaAs substrates. It was noted that a strong field ( <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math...
Single-crystalline BiFeO3 (BFO)/Co bilayers were prepared by combined pulsed laser deposition and magnetron sputtering on (001) SrTiO3 substrates. Exchange bias (EB) accompanying training effect have been studied as a function of temperature (T) between 5 K 300 K. A non-monotonic exchange field variation with sharp increase below 100 has observed. In the meanwhile, strong was recorded when T &lt; it weakens monotonically increasing up to These dependent EB may be caused uncompensated...
Nanoscale CoFeB amorphous films have been synthesized on GaAs(100) and studied with X-ray magnetic circular dichroism (XMCD) transmission electron microscopy (TEM). We found that the ratios of orbital to spin moments both Co Fe in ultrathin film enhanced by more than 300% compared those bulk crystalline Fe, specifically, a large moment 0.56*10^-6 B from atoms has observed at same time remains comparable hcp Co. The results indicate uniaxial anisotropy (UMA) is related spin-orbital coupling...
Tuning magnetic damping constant in dedicated spintronic devices has important scientific and technological implications. Here we report on anisotropic various compositional amorphous CoFeB films grown GaAs(001) substrates. Measured by a vector network analyzer-ferromagnetic resonance (VNA-FMR) equipment, giant anisotropy of 385%, i.e., the increases about four times, is observed 10-nm-thick Co 40 Fe B 20 film when its magnetization rotates from easy axis to hard axis, accompanied large pure...
Stochastic phenomena in magnetic nanowires based on domain wall (DW) motion is scientifically important thus to understand and control such behaviors are very meaningful. Here we report the investigation of pinning depinning DWs permalloy with six types longitudinally asymmetric notches using focused magneto-optic Kerr effect (FMOKE) magnetometer force microscopy (MFM). The hysteresis loops obtained by FMOKE indicate generation one or two distinct fields creating notch close edge nanowires,...
A considerable in-plane uniaxial magnetic anisotropy (UMA) field (Hu ∼ 300 Oe) could be achieved when the amorphous CoFeB film was deposited on GaAs(001) wafer by magnetron-sputtering after proper etch-annealed procedure. In order to get deep insights into mechanism of UMA, annealed at different temperatures and evolution investigated carefully. With increasing annealing temperature (TA), UMA maintained well TA reached 250°C, but became very weak 300°C. However, elevated 400°C, another 130...
Suppressing the stochastic domain wall (DW) motion in magnetic nanowires is of great importance for designing DW-related spintronic devices. In this work, we have investigated pinning/depinning processes DWs permalloy with three different types notches by using longitudinal magnetoresistance (MR) measurement. The averaged MR curves demonstrate that DW depinning suppressed partly or even completely a transversely asymmetric notch. single-shot show how resistance changes applied field also...
Amorphous magnetic CoFeB ultrathin films have been synthesized on the narrow band gap semiconductor InAs(100) surface, and nature of interface anisotropy electrical contact has studied. Angle-dependent hysteresis loops reveal that an in-plane uniaxial (UMA) with easy axis along InAs [0-11] crystal direction. The UMA was found to be dependent annealing temperatures substrates, which indicates significant role Fe, Co-As bonding at related surface condition InAs(100). <inline-formula...
We demonstrated an electric field controlled exchange bias (EB) effect accompanied with unipolar resistive switching behavior in the Si/SiO2/Pt/Co/NiO/Pt device. By applying certain voltages, device displays obvious EB high-resistance-state while negligible low-resistance-state. Conductive filaments forming and rupture NiO layer but near Co-NiO interface are considered to play dominant roles determining combined phenomena. This work paves a new way for designing multifunctional nonvolatile...