A5015257246- 2D Materials and Applications
- Graphene research and applications
- Heusler alloys: electronic and magnetic properties
- ZnO doping and properties
- MXene and MAX Phase Materials
- Chalcogenide Semiconductor Thin Films
- Magnetic and transport properties of perovskites and related materials
- Advanced Condensed Matter Physics
- Perovskite Materials and Applications
- Advanced Memory and Neural Computing
- Ga2O3 and related materials
- Electrocatalysts for Energy Conversion
- High voltage insulation and dielectric phenomena
- Physics of Superconductivity and Magnetism
- Metal-Organic Frameworks: Synthesis and Applications
- Phase-change materials and chalcogenides
- Power Transformer Diagnostics and Insulation
- Nanowire Synthesis and Applications
- Quantum and electron transport phenomena
- Iron-based superconductors research
- Advanced Photocatalysis Techniques
- Quantum Dots Synthesis And Properties
- Material Properties and Failure Mechanisms
- Aerosol Filtration and Electrostatic Precipitation
Institute for Basic Science
2021-2024
Texas A&M University
2024
Sungkyunkwan University
2021-2024
Laboratoire de Mécanique, Modélisation & Procédés Propres
2024
Rational modification of the chemical components metal–organic framework (MOF) is one most promising and challenging strategies to alternate noble metals in electrochemical water-splitting field. Multimetallic MOFs have emerged as excellent materials for several applications; however, it remains a significant challenge synthesize characterize these materials. In this work, we report facile approach synthesizing series multimetallic MOF nanosheet-assembled hierarchical flower-like...
Doping is one of the most difficult technological challenges for realizing reliable two-dimensional (2D) material-based semiconductor devices, arising from their ultrathinness. Here, we systematically investigate impact different types nonstoichiometric solid MOx (M are W or Mo) dopants obtained by oxidizing transition metal dichalcogenides (TMDs: WSe2 MoS2) formed on graphene FETs, which results in p-type doping along with disorders. From this study, were able to suggest an analytical...
Magnetic order has been proposed to arise from a variety of defects, including vacancies, antisites, and grain boundaries, which are relevant in numerous electronics spintronics applications. Nevertheless, its magnetism remains controversial due the lack structural analysis. The escalation ferromagnetism vanadium-doped WSe2 monolayer is herein demonstrated by tailoring complex configurations Se vacancies (SeVac ) via post heat-treatment. Structural analysis atomic defects systematically...
Chemical vapor deposition (CVD) can produce wafer-scale transition-metal dichalcogenide (TMD) monolayers for the integration of electronic and optoelectronic devices. Nonetheless, material quality CVD-grown TMDs still remains controversial. Here, we compare representative WSe2 grown by CVD compared to that obtained other synthesis methods: bulk-grown-chemical transport (CVT) flux. Through use a deep-learning–based algorithm analyze atomic-resolution scanning transmission electron microscopy...
While valley polarization with strong Zeeman splitting is the most prominent characteristic of two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductors under magnetic fields, enhancement has been demonstrated by incorporating dopants into host materials. Unlike Fe, Mn, and Co, V a distinctive dopant for ferromagnetic semiconducting properties at room temperature large shifting band edges. Nevertheless, little known excitons interacting spin-polarized carriers in V-doped...
Although room-temperature ferromagnetic semiconducting has been demonstrated in V-doped WSe${}_{2}$ monolayer with gate-tunable magnetic domains, there is no direct evidence for their spin-polarized band structure. Here, the authors report finding a giant Zeeman shift (a $g$ factor up to 135) of edges multilayered vanadium-doped WSe${}_{2}$, seen via magnetotunneling current measurement graphite/V-WSe${}_{2}$/graphite heterojunction. The observation V-WSe${}_{2}$ provides concrete diluted...
Abstract The ability to dope transition metal dichalcogenides such as tungsten diselenide (WSe 2 ) with magnetic atoms in a controlled manner has motivated intense research the aim of generating dilute semiconductors. In this work, semiconducting WSe monolayers, substitutionally doped vanadium atoms, are investigated using low‐temperature luminescence and optoelectronic spectroscopy. V‐dopants lead p‐type doping character an impurity‐related emission ≈160 meV below neutral exciton, both...
The confined defects in 2D van der Waals (vdW)-layered semiconductors can be easily tailored using charge doping, strain, or an electric field. Nevertheless, gate-tunable magnetic order via intrinsic has been rarely observed to date. Herein, a resonant Se vacancies WSe2 is demonstrated. Se-vacancy states are probed photocurrent measurements with gating convert unoccupied partially occupied associated photo-excited carrier recombination. magneto-photoresistance hysteresis modulated by gating,...
Two-dimensional (2D) transition-metal dichalcogenides (TMDCs), such as tungsten diselenide (WSe
Linear resistivity–temperature (R–T) at low temperatures, referred to as strange metal (SM), is an unusual characteristic observed in strongly correlated systems. SM often mingled with superconductivity and magnetism various materials. Here, we report a linear R–T relation hole-doped, degenerate spin-valley (SV) semiconductor, V0.25W0.75Se2, hole pockets the valence band. emerges over wide temperature range (1.8–150 K) without any apparent down 110 mK. This behavior suppressed temperatures...
Temperature-linear resistance at low temperatures in strange metals is an exotic characteristic of strong correlation systems, as observed high-TC superconducting cuprates, heavy fermions, Fe-based superconductors, ruthenates, and twisted bilayer graphene. Here, we introduce a hole-doped valley-spin insulator, V-doped WSe2, with hole pockets the valence band. The metal was VxW1-xSe2 critical carrier concentration 9.5 x 10^20 cm-3 from 150 K to 1.8 K. unsaturated magnetoresistance almost...