A5102748103- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Electrostatic Discharge in Electronics
- Electromagnetic Compatibility and Noise Suppression
- Silicon and Solar Cell Technologies
- Electronic Packaging and Soldering Technologies
- Multilevel Inverters and Converters
- Induction Heating and Inverter Technology
- Aluminum Alloys Composites Properties
- Power Systems and Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Power Systems and Renewable Energy
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced DC-DC Converters
- Mechanical stress and fatigue analysis
- Advanced Welding Techniques Analysis
- Real-time simulation and control systems
- Electrical Contact Performance and Analysis
- Advanced Surface Polishing Techniques
- Thin-Film Transistor Technologies
- Photovoltaic System Optimization Techniques
- Advanced Electron Microscopy Techniques and Applications
- HVDC Systems and Fault Protection
- Electrical Fault Detection and Protection
- Near-Field Optical Microscopy
Vestas (Denmark)
2018-2019
Aalborg University
2012-2017
A basic challenge in the insulated gate bipolar transistor (IGBT) transient simulation study is to obtain realistic junction temperature, which demands not only accurate electrical simulations but also precise thermal impedance. This paper proposed a model for IGBT temperature during short circuits or overloads. The updated Cauer with varying parameters obtained by means of finite-element method (FEM) temperature-dependent physical parameters. applied case 1700 V/1000 module. Furthermore,...
A degradation model investigating the electro-thermo-mechanical fatigue, experienced by insulated gate bipolar transistors modules, is presented. To illustrate concept, a specific case of power modules subjected to active cycling which induce failure through bond wire lift-off considered. Bond believed be due thermally induced stress arising from mismatch in coefficients thermal expansion between wires and given substrate. Overall, theoretical evaluation based on determining...
Four-point probing of electrical parameters on various components IGBT modules is suggested as an approach for the estimation degradation in stressed devices. By comparison these and new one can evaluate overall module find out wear state individual components. This knowledge be applied preventing early failures optimization device design. The method presented by regarding a standard type power subjected to cycling.
In this paper the bond wire lift-off failure mechanism experienced in insulated gate bipolar transistor modules, under realistic operation conditions, is investigated theoretically. This type generally believed to be due thermally induced stress arising from a mismatch coefficients of thermal expansion materials constituting module. The theoretical evaluation based on finite element approach combined with empirical equations. Here thermomechanical around wire/substrate interface evaluated....
A double point monitoring concept of the on-state voltage is presented as a means to identify failure mode early in power module lifetime. The approach carried out simple accelerated test setup, however, it argued that concepts should be possible field. Additionally, by carrying calibration conditions shown fracture rate bond wire fatigue mechanism. curve shape degradation accordance with expected theory.
Several accelerated test methods exist in order to study the failures mechanisms of high power IGBT modules like temperature cycling or cycles based on DC current pulses. The main drawback is that conditions do not represent real performance and stress device application. hypothesis ageing closer environment including cooling system, full dc-link voltage continuous PWM operation could lead more accurate failure mechanism. A new type setup proposed, which can create different load field....
This paper presents on-state collector-emitter voltage (υ <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ce, on</inf> )-load current (I xmlns:xlink="http://www.w3.org/1999/xlink">c</inf> ) method to monitor chip temperature on power insulated gate bipolar transistor (IGBT) modules in converter operation. The measurement is also evaluated using infrared (IR) thermography. Temperature dependencies of υ at load measured and dependency calibration...
Degradation of Al metallization on Si-based semiconductor chips under operation is a reliability problem known for many years, but the mechanisms this phenomenon are not fully understood. To quantify contributions different possible effects, passive thermal cycling setup has been developed allowing accelerated tests by varying device temperature short-time scale without applying electrical power. The also capable testing devices in atmospheres. results obtained diode compared to those from...