Effects of shallow carbon and deep N++ layer on the radiation hardness of IHEP-IME LGAD sensors

• DOI: 10.48550/arxiv.2110.12632
• Publication Date: 2021-01-01
• Authors: Mengzhao Li; Y. Fan; Xuewei Jia; Han Cui; Z. Liang; Mei Zhao; Tao Yang; Kewei Wu; Shuqi Li; Chengjun Yu; B. Liu; W. Wang; X. Yang; Yuhang Tan; Xin Shi; J. G. da Costa; Y. K. Heng; Gaobo Xu; Qionghua Zhai; Gangping Yan; Mingzheng Ding; Jun Luo; Huaxiang Yin; Junfeng Li; A. S. Howard; G. Kramberger
• Keywords: Radiation hardening; Carbon fibers; Microelectronics; Granularity

Low Gain Avalanche Diode (LGAD) is applied for the High-Granularity Timing Detector (HGTD), and it will be used to upgrade ATLAS experiment. The first batch IHEP-IME LGAD sensors were designed by Institute of High Energy Physics (IHEP) fabricated Microelectronics (IME). Three (W1, W7 W8) irradiated neutrons up fluence 2.5 x 10^15 n_eq/cm^2 study effect shallow carbon deep N++ layer on irradiation hardness. Taking as a reference, W1 has an extra applied, W8 deeper layer.