26.5 ps Time Resolution Using 50 μm Low Gain Avalanche Detectors Fabricated by Micron Semiconductor Ltd
Semiconductor detector
Tracking (education)
DOI:
10.48550/arxiv.2310.06183
Publication Date:
2023-01-01
AUTHORS (9)
ABSTRACT
Low Gain Avalanche Detectors (LGADs) are silicon semiconductor sensors with an implanted thin p-doped multiplication layer that is designed to provide low gain. Most importantly, LGADs specifically engineered excellent spatial and temporal resolution simultaneously. The technology shows promising prospects of fulfilling the 4D tracking requirements future high energy physics experiments. Micron Semiconductor Ltd. has fabricated active thickness 50 $\mu$m. electrical timing performance been measured compared devices at IMB-CNM for reference. $\mu$m by were have a in region 30 ps using dedicated setup involving minimum ionising particles produced Sr-90. Specifically, best 26.5 was bias voltage 200 V -30{\deg}C.
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