A5075925440- Particle Detector Development and Performance
- Radiation Detection and Scintillator Technologies
- CCD and CMOS Imaging Sensors
- Radiation Effects in Electronics
- Atomic and Subatomic Physics Research
- Silicon Carbide Semiconductor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Ga2O3 and related materials
- Advanced Semiconductor Detectors and Materials
- Medical Imaging Techniques and Applications
- Nanowire Synthesis and Applications
- Dark Matter and Cosmic Phenomena
- Photocathodes and Microchannel Plates
- Integrated Circuits and Semiconductor Failure Analysis
- Particle physics theoretical and experimental studies
- Superconducting Materials and Applications
- Analytical Chemistry and Sensors
- Graphene research and applications
Centro Nacional de Microelectrónica
2022-2024
Institut de Microelectrònica de Barcelona
2022-2024
University of Glasgow
2018-2021
Abstract Silicon carbide (SiC) has outstanding physical properties therefore, diodes based on SiC are being considered for many radiation detection applications such as particle accelerator experiments and medical dosimetry. Moreover, by reducing the metal surface of diode there is potential to enhance its performance in some fields where presence detrimental. To this end, detectors with an epitaxially-grown graphene layer (EG), that substitutes metallic contact, sensitive region were...
A new avalanche silicon detector concept is introduced with a low gain in the region of ten, known as Low Gain Avalanche Detector, LGAD. The detector's characteristics are simulated via full process simulation to obtain required doping profiles which demonstrate desired operational high breakdown voltage (500 V) and 10 at 200 V reverse bias for X-ray detection. first detectors fabricated by Micron Semiconductor Ltd presented. multiplication junctions were measured SIMS reproduced simulating...
In the last few years, Low Gain Avalanche Detectors (LGAD) have demonstrated their outstanding performance when detecting high-energy charged particles. However, due to difference in multiplication mechanism for holes and electrons, detection low penetrating particles (e.g low-energy protons or soft x-rays) is significantly reduced. A novel design of an LGAD detector, NLGAD, was designed fabricated at CNM overcome this drawback. qualitative description NLGAD concept presented work, along...
Abstract Low Gain Avalanche Detectors (LGADs) are n-on-p silicon sensors with an extra p-layer below the collection electrode which provides signal amplification. When primary electrons reach amplification region new electron-hole pairs created that enhance generated signal. The moderate gain of these sensors, together relatively thin active region, provide precise time information for minimum ionizing particles. To mitigate effect pile-up at HL-LHC ATLAS and CMS experiments have chosen LGAD...
Small pixel Low Gain Avalanche Detectors (LGADs) have the potential, with a low gain in region of ten and pitch 55μm, to detect high spatial resolution < 1 keV photons by sub-threshold detection hybrid detector. TCAD simulation has been performed establish minimum pitch, quantified terms fill factor, achievable current process technology. The results show, using Micron Semiconductor Ltd LGAD as typical example process, factor 55μm is 0%, that small device not possible standard Increasing...
Pixelated LGADs have been established as the baseline technology for timing detectors High Granularity Timing Detector (HGTD) and Endcap Layer (ETL) of ATLAS CMS experiments, respectively. The drawback segmenting an LGAD is non-gain area present between pixels consequent reduction in fill factor. To overcome this issue, inverse (iLGAD) has proposed by IMB-CNM to enhance factor provide excellent tracking capabilities. In work, we explore use iLGAD sensors surface damage irradiation developing...
A new avalanche silicon detector concept is introduced with a low gain in the region of 5 to 10, known as Low Gain Avalanche Detector, LGAD. The lower reduces noise comparison standard photodiode. LGAD can be segmented produce hybrid pixel detectors for energy X-ray detection. Thin LGAD's same, or larger, signals PIN diode produced by minimum ionising particles (mips), however collection time reduced. thickness reduction factor an sensor equal For example; 30μm thick 10 will give same signal...
Ultrathin semiconductor photodiodes are of interest for beam position and monitoring in X-ray synchrotron beamlines particle therapy medical applications. In this work, single four-quadrant diodes have been fabricated on ultrathin Si films with thicknesses 10 μm, 5 μm 3 from silicon insulator (SOI) substrates. Physical electrical characterization the devices has carried out. Good functional characteristics obtained different thicknesses. The impact electron, neutron proton irradiations...
Over the past few years, Low Gain Avalanche Detectors (LGAD) have shown excellent timing performance with hope to be utilized for 4D-tracking of high-energy charged particles. LGADs co-doping carbon has been demonstrated a key factor in enhancement their as detectors intrinsic amplification harsh radiation environments. A wide characterization, before irradiation, latest carbonated fabricated at IMB-CNM is presented this work. The results show that addition improves gain devices, given...
Abstract This contribution reports on characterisation results of a large-area (2 cm 2 ) small pitch (55 µm) inverse Low-Gain Avalanche Detector (iLGAD), bonded to Timepix3 readout chip. The ilGAD sensors were produced by Micron Semiconductor Ltd with the goal obtain good gain uniformity and maximise fill-factor — an issue present standard small-pitch LGAD designs. We have conducted detailed performance evaluations using both X-ray calibrations beam tests. An fluorescence setup has been used...
Abstract Collider experiments as the upcoming Phase II-LHC or future circular collider (FCC) will increase demands on tracking detectors. In FCC hadron collider, sensors not only face fluences up to 1 × 10 17 n eq /cm 2 , but also high pile-up scenarios. Therefore, be required have a good spatial resolution and very radiation hardness, an excellent time of order 5 ps. Currently, Low Gain Avalanche Diodes (LGADs) are one main candidates when it comes timing, achieving well below 30 However,...
Low Gain Avalanche Detectors (LGADs) are silicon semiconductor sensors with an implanted thin p-doped multiplication layer that is designed to provide low gain. Most importantly, LGADs specifically engineered excellent spatial and temporal resolution simultaneously. The technology shows promising prospects of fulfilling the 4D tracking requirements future high energy physics experiments. Micron Semiconductor Ltd. has fabricated active thickness 50 $\mu$m. electrical timing performance been...
In the last decade, Low Gain Avalanche Detectors (LGAD) have demonstrated their sterling performance when detecting high-energy particles. Nevertheless, due to difference in multiplication mechanism for holes and electrons, detection low penetrating particles (e.g low-energy protons or soft x-rays) is drastically reduced. A pioneering conception of an LGAD detector, nLGAD, was designed fabricated at IMB-CNM resolve this limitation. description nLGAD concept presented work, along with gain...
LGAD technology is established within the field of particle physics, as baseline for timing detectors both ATLAS and CMS upgrades at HL-LHC. Pixelated LGADs have been proposed High Granularity Timing Detector (HGTD) Endcap Layer (ETL) experiments, respectively. The drawback segmenting an non-gain area between pixels consequent reduction in fill factor. In this sense, inverse (iLGAD) has by IMB-CNM to enhance factor reach excellent tracking capabilities. work, we explore use iLGAD sensors...
Silicon sensors are the go-to technology for high-precision in particle physics. But only recently low-noise silicon with internal amplification became available. The so-called Low Gain Avalanche Detector (LGAD) have been developed applications High Energy Physics, but lack two characteristics needed measurement of low-energy protons (<60 keV): a thin entrance window (in order tens nm) and efficient signals created near sensor's surface depth below 1 um). In this paper we present proton...
Low Gain Avalanche Detectors (LGADs) are n-on-p silicon sensors with an extra p-layer below the collection electrode which provides signal amplification. When primary electrons reach amplification region new electron-hole pairs created that enhance generated signal. The moderate gain of these sensors, together relatively thin active region, provide precise time information for minimum ionizing particles. To mitigate effect pile-up at HL-LHC ATLAS and CMS experiments have chosen LGAD...
We present a novel scalable graphene-silicon hybrid photodiode that enables deep UV imaging. have created with reduced dead layer entrance window. Existing photodiodes are limited in sensitivity for low wavelengths due to the penetration depth of photons < 400 nm. Typical junction implant which causes penetrating be recombined this layer. Here, we utilized near transparent nature single graphene create minimum To full active bulk volume combined ring (n++ bias ring) graphene. The acts as...