A5080777500- Silicon Carbide Semiconductor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Particle Detector Development and Performance
- Electrostatic Discharge in Electronics
- Radiation Detection and Scintillator Technologies
- Radiation Effects in Electronics
- Thin-Film Transistor Technologies
- Electromagnetic Compatibility and Noise Suppression
- CCD and CMOS Imaging Sensors
- Integrated Circuits and Semiconductor Failure Analysis
- Induction Heating and Inverter Technology
- Advanced DC-DC Converters
- Semiconductor materials and interfaces
- Advancements in Battery Materials
- Supercapacitor Materials and Fabrication
- Advanced Battery Technologies Research
- GaN-based semiconductor devices and materials
- Sensor Technology and Measurement Systems
- FOXO transcription factor regulation
- Silicon and Solar Cell Technologies
- Medical Imaging Techniques and Applications
- Ion-surface interactions and analysis
- Advanced Semiconductor Detectors and Materials
- 3D IC and TSV technologies
Sandia National Laboratories
2024
The University of Texas Rio Grande Valley
2016-2023
Centro Nacional de Microelectrónica
2010-2023
Institut de Microelectrònica de Barcelona
2013-2023
Institut Systèmes Intelligents et de Robotique
2019
Laboratoire d'Analyse et d'Architecture des Systèmes
2019
University of California, Santa Cruz
2017
Istituto Nazionale di Fisica Nucleare, Sezione di Torino
2016
Consejo Superior de Investigaciones Científicas
2002-2015
Universitat Autònoma de Barcelona
2007-2013
We present a continuous analytic current-voltage (I-V) model for cylindrical undoped (lightly doped) surrounding gate (SGT) MOSFETs. It is based on the exact solution of Poisson's equation, and current continuity equation without charge-sheet approximation, allowing inversion charge distribution in silicon film to be adequately described. valid all operation regions (linear, saturation, subthreshold) traces transition between them fitting parameters, being ideal kernel SGT MOSFETs compact...
In this paper we report on the timing resolution of first production 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions 180 GeV/c momentum. UFSD are based Low-Gain Avalanche (LGAD) design, employing n-on-p silicon sensors internal charge multiplication due to presence thin, low-resistivity diffusion layer below junction. The used belongs thin (50 μm) sensors, an pad area 1.4 mm2. gain was measured vary between 5 and 70 depending bias voltage....
Novel silicon detectors with charge gain were designed (Low Gain Avalanche Detectors - LGAD) to be used in particle physics experiments, medical and timing applications. They are based on a n++-p+-p structure where appropriate doping of multiplication layer (p^+) is needed achieve high fields impact ionization. Several wafers processed different junction parameters resulting gains up 16 at voltages. In order study radiation hardness LGAD, which one key requirements for future energy several...
This paper reports the latest technological development on Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based standard Photo Diodes (APD) concept, commonly used in optical X-ray detection applications, including an internal multiplication charge generated by radiation. The is inherent to basic n++–p+–p structure, where doping profile p+ layer optimized achieve high field impact ionization at junction....
Abstract Traditional methods of shielding fragile goods and human tissues from impact energy rely on isotropic foam materials. The mechanical properties these foams are inferior to an emerging class metamaterials called plate lattices, which have predominantly been fabricated in simple 2.5‐dimensional geometries using conventional that constrain the feasible design space. In this work, additive manufacturing is used relax constraints realize lattice with nontrivial, locally varying geometry....
Polycaprolactone (PCL) fibers were produced using Forcespinning® (FS). The effects of PCL concentration, solvent mixture, and the spinneret rotational speed on fiber formation evaluated. concentration polymer in solvents was a critical determinant solution viscosity. Lower concentrations resulted low viscosities with correspondingly production rate many beads. Bead-free high uniform diameter distribution obtained from optimum (i.e., 12.5 wt%) tetrahydrofuran (THF) as solvent. addition N,...
For the high luminosity upgrade of LHC at CERN, ATLAS is considering addition a High Granularity Timing Detector (HGTD) in front end cap and forward calorimeters |z|= 3.5 m covering region 2.4 <|η|< 4 to help reducing effect pile-up. The chosen sensors are arrays 50 μm thin Low Gain Avalanche Detectors (LGAD). This paper presents results on single LGAD with surface area 1.3×1.3 mm2 2×2 pads or 3×3 each different implant doses p+ multiplication layer. They obtained from data collected during...
Basal‐like breast cancer (BBC) and glioblastoma multiforme (GBM) are poor‐prognosis cancers that lack effective targeted therapies harbor embryonic stem gene expression signatures. Recently, our group others found forkhead box transcription factor FOXO1 promotes in BBC GBM cell lines. Given the critical role of cells promoting progression, we examined impact inhibition with AS1842856 (a cell‐permeable small molecule directly binds to unphosphorylated protein block transcriptional regulation)...
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Low Gain Avalanche Detectors (LGADs) are silicon sensors with a built-in charge multiplication layer providing gain of typically 10 to 50. Due the combination high signal-to-noise ratio and short rise time, thin LGADs provide good time resolutions. an active thickness about 45 μm were produced at CNM Barcelona. Their gains resolutions studied in beam tests for two different implantation doses, as well before after irradiation neutrons up 1015 neq/cm2. The showed expected decrease fixed...
Total Ionising Dose (TID) effects are the most important of ionising radiation in MOS devices. Among others, TID cause charge trapping oxide and oxide-semiconductor interface. In this work we develop physical simulation models capacitors, order to have a calculation model for postirradiation experiments. Simulations made using Sentaurus TCAD suite, comparing results with well established literature. We calculate modifications C-V curve dependence flat band voltage due oxide, interface traps...