A5062063428- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and interfaces
- Thin-Film Transistor Technologies
- Silicon and Solar Cell Technologies
- Silicon Nanostructures and Photoluminescence
- Silicon Carbide Semiconductor Technologies
- Radiation Effects in Electronics
- Ga2O3 and related materials
- ZnO doping and properties
- Advanced Photocatalysis Techniques
- Chalcogenide Semiconductor Thin Films
- Surface and Thin Film Phenomena
- GaN-based semiconductor devices and materials
- Quantum Dots Synthesis And Properties
- Semiconductor Quantum Structures and Devices
- Advanced Semiconductor Detectors and Materials
- Metallic Glasses and Amorphous Alloys
- Copper-based nanomaterials and applications
- Phase-change materials and chalcogenides
- Nanowire Synthesis and Applications
- CCD and CMOS Imaging Sensors
- Radiation Detection and Scintillator Technologies
- Autonomous Vehicle Technology and Safety
National Institute of Technology, Kumamoto College
2014-2024
Fukuyama City Zoo
2024
National Institute of Technology, Kagoshima College
2020-2023
Jožef Stefan Institute
2023
European Organization for Nuclear Research
2023
University of Tsukuba
2000-2003
Optical and electrical properties of polycrystalline orthorhombic BaSi2 prepared by arc melting in Ar atmosphere were investigated. The optical absorption spectra measured at room temperature showed that indirect direct edges 1.15 1.25 eV, respectively. activation energy estimated from dependence the resistivity was 1.10 eV. These results agreed well with a calculated band structure first principles calculation using density functional theory.
Owing to their low dark current, high transparency, thermal conductivity, and potential radiation hardness, there is a special interest in silicon carbide (SiC) devices for monitoring harsh environments with elevated temperatures and, especially, the plasma diagnostic systems future nuclear fusion reactors. In this work, four-quadrant p-n junction diodes produced on epitaxial 4H-SiC substrates are studied. The impact of electron, neutron, proton irradiations (up fluences 1 × 10 <sup...
In this article, GaN/AlGaN metal-oxide- semiconductor high-electron-mobility field-effect transistors (MOSHEMTs) fabricated on high-resistivity Si (111) substrates have been evaluated using lowfrequency (LF) noise measurement. The power spectral density (PSD) of devices with different lengths and channel orientations has characterized in linear operation. No noticeable differences the electrical PSD characteristics observed between GaN [11̅00] [112̅0] orientations. While most are dominated...
We have directly grown [100]-oriented high-quality β-FeSi 2 films on Si(001) substrates with a template by molecular beam epitaxy(MBE) at 470°C. It was found that the crystalline quality of as-grown film as good multilayer method far X-ray diffraction intensity concerned. However, electrical property very poor. The and were much more quickly improved 900°C annealing compared to technique. [100] orientation MBE-grown preserved even for 1-µm-thick film.
The optical and electrical properties of proton irradiated Cu(In,Ga)Se 2 (CIGS) solar cells the composed thin films such as transparent conducting oxide (TCO) CIGS were investigated. transmittance resistivity TCO window layers remained constant for a fluence up to 3×10 15 cm -2 . For films, photoluminescence (PL) peak intensity tended decrease, possibly because number nonradiative recombination centers increased under irradiation. In addition, PL spectra suggested that absorber layer and/or...
Silicon carbide (SiC) is a wide bandgap semiconductor with outstanding properties that make it especially appropriate for radiation monitoring in harsh environments and elevated temperature operation.In this work, effects electron, neutron proton irradiated 4H-SiC pn junction diodes are investigated by means of electrical characterization, including currentvoltage characteristics measured at different temperatures ranging from -50 ºC to +200 ºC.Moreover, stability the radiation-induced...
Silicon photodiodes are very useful devices as X-ray beam monitors in synchrotron radiation beamlines, well other astronomy and space applications. Owing to their lower susceptibility variable temperature illumination conditions, there is also special interest silicon carbide for some of these Moreover, hardness the involved technologies a major concern high-energy physics This work presents four-quadrant produced on ultrathin (10 μm) bulk Si, SiC epilayer substrates. An extensive electrical...
The hole mobility of intentionally undoped p-type β-FeSi2 thin films grown by a multilayer method was investigated. With increasing annealing temperature and time, the increased to approximately 450cm2∕Vs at room (RT). observed analyzed considering various carrier scatterings such as acoustic-phonon polar-optical-phonon scatterings, intervalley scattering, ionized impurity grain-boundary scattering. nice fit experimental results reveals that scattering determines RT.
Abstract Crystalline quality and optical properties of gallium oxide films grown on SiO 2 substrates by RF magnetron sputtering were studied. After the post annealing, it could be confirmed growth (Ga O 3 ) film changed in a β ‐Ga film. Estimated energy gap as‐grown annealed are same from 4.85 to 4.90 eV. The for as‐deposited corresponds band 3. It has property nevertheless Ga films. integrated absorption coefficient under decreases with increasing thickness These results indicate that...
The degradation of deep submicron (0.1 /spl mu/m) fully depleted (FD)-silicon-on-insulator (SOI) n-channel metal oxide semiconductor field effect transistors (MOSFETs) subjected to 7.5-MeV proton irradiation is reported. radiation-induced damage investigated by studying the static characteristics devices with different geometries and bias conditions. Special attention paid analysis front-back gate coupling changing back-gate V/sub BG/. change front back channel parameters, impact...
Abstract Egg-laying mammals (monotremes) are considered “primitive” due to traits such as oviparity, cloaca, and incomplete homeothermy, all of which they share with reptiles. Two groups monotremes, the terrestrial echidna (Tachyglossidae) semiaquatic platypus (Ornithorhynchidae), have evolved highly divergent characters since their emergence in Cenozoic era. These evolutionary differences, notably including distinct electrosensory chemosensory systems, result from adaptations...
The radiation tolerance of a microcontroller (Raspberry Pi) required for the development decommissioning robots was investigated. We found that flash memory needed to boot had particularly low-radiation tolerance, significantly reducing operation duration in environment. also certain high-performance memories have high tolerance. Investigation process by which becomes inoperable revealed internal information is rewritten owing irradiation, leading limited lifetime memory.
Abstract The 2‐MeV electron radiation damage of Si 1‐x Ge x source/drain (S/D) p‐type metal oxide semiconductor field effect transistors (p‐MOSFETs) with different contents is studied. Before irradiation, an enhancement the hole mobility content S/D stressors clearly observed. On other hand, after drain current and maximum decreases increasing fluence for all contents, because lattice defects are introduced by irradiation in channel. threshold voltage shifts degradation independent on...
Abstract The effects of Au insertion in solid-phase crystallization for amorphous Ge films on SiO 2 /Si substrates were investigated to achieve oriented crystalline Ge. After high-temperature annealing above 300 °C, atoms highly diffused the layer. resulting consisted random grains formed by crystal nucleation entire region. However, when temperature was decreased below 250 localized at their initial position even after a long (20 h). Moreover, formation preferentially (111)-oriented...