High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities

• DOI: 10.48550/arxiv.2406.02008
• Publication Date: 2024-06-04
• Authors: Seunguk Song; Kwan‐Ho Kim; Rachael Keneipp; Nicholas Trainor; Chen Chen; Jeffrey Zheng; Joan M. Redwing; Marija Drndić; Roy H. Olsson; Deep Jariwala
• Keywords: FOS: Physical sciences; Physics - Applied Physics; Applied Physics (physics.app-ph)

Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of FeFETs can be limited by a charge imbalance between ferroelectric layer and channel, low-dimensional semiconductors, also high contact resistance metal electrodes channel. Here, we report significant enhancement in contact-engineered 2D MoS2 channel Al0.68Sc0.32N (AlScN) gate dielectric. Replacing Ti In results fivefold increase on-state current (~120 uA/um at 1 V) on-to-off ratio (~2*10^7) FeFETs. addition, carrier concentration during (> 10^14 cm^-2) facilitates observation metal-to-insulator phase transition monolayer permitting field effect mobility 100 cm^2V^-1s^-1) cryogenic temperatures. Our work devices broaden potential provides unique platform to implement high-carrier-density transport