A5008984744- 2D Materials and Applications
- Advanced Memory and Neural Computing
- MXene and MAX Phase Materials
- Perovskite Materials and Applications
- Graphene research and applications
- Ferroelectric and Negative Capacitance Devices
- Chalcogenide Semiconductor Thin Films
- CCD and CMOS Imaging Sensors
- Quantum Dots Synthesis And Properties
- Ga2O3 and related materials
- Error Correcting Code Techniques
- Acoustic Wave Resonator Technologies
- Strong Light-Matter Interactions
- Stochastic Gradient Optimization Techniques
- Quantum Computing Algorithms and Architecture
- Semiconductor materials and devices
- Mechanical and Optical Resonators
- Gas Sensing Nanomaterials and Sensors
- Visual Attention and Saliency Detection
- Topological Materials and Phenomena
- Quantum-Dot Cellular Automata
- Ferroelectric and Piezoelectric Materials
- Electronic and Structural Properties of Oxides
- Molecular Communication and Nanonetworks
- Radiation Effects in Electronics
Pennsylvania State University
2021-2025
Drexel University
2019
Realization of wafer-scale single-crystal films transition metal dichalcogenides (TMDs) such as WS2 requires epitaxial growth and coalescence oriented domains to form a continuous monolayer. The must be in the same crystallographic direction on substrate inhibit formation inversion domain boundaries (IDBs), which are common feature layered chalcogenides. Here we demonstrate fully coalesced unidirectional monolayers 2 in. diameter c-plane sapphire by metalorganic chemical vapor deposition...
Abstract In the emerging era of internet things (IoT), ubiquitous sensors continuously collect, consume, store, and communicate a huge volume information which is becoming increasingly vulnerable to theft misuse. Modern software cryptosystems require extensive computational infrastructure for implementing ciphering algorithms, making them difficult be adopted by IoT edge that operate with limited hardware resources at low energy budgets. Here we propose experimentally demonstrate an...
Recent advancements in ferroelectric field-effect transistors (FeFETs) using two-dimensional (2D) semiconductor channels and Al0.68Sc0.32N (AlScN) allow high-performance nonvolatile devices with exceptional ON-state currents, large ON/OFF current ratios, memory windows (MW). However, previous studies have solely focused on n-type FeFETs, leaving a crucial gap the development of p-type ambipolar which are essential for expanding their applicability to wide range circuit-level applications....
Abstract Stacking different 2D materials is a promising strategy to fabricate heterostructures that combine the advantages and eliminate associated shortcomings of individual building blocks. When used for energy storage, provide opportunity manufacture flexible conductive paper electrodes, which require no binders, additives, or current collectors. Here, MXene/graphene heterostructured papers are manufactured by alternately stacking Ti 3 C 2 T x MXene reduced graphene oxide (rGO) nanosheets...
Abstract Bayesian networks (BNs) find widespread application in many real-world probabilistic problems including diagnostics, forecasting, computer vision, etc. The basic computing primitive for BNs is a stochastic bit (s-bit) generator that can control the probability of obtaining ‘1’ binary bit-stream. While silicon-based complementary metal-oxide-semiconductor (CMOS) technology be used hardware implementation BNs, lack inherent stochasticity makes it area and energy inefficient. On other...
Two-dimensional chalcogenide semiconductors have recently emerged as a host material for quantum emitters of single photons. While several reports on defect- and strain-induced single-photon emission from 2D chalcogenides exist, bottom-up, lithography-free approach to producing high density remains elusive. Further, the physical properties in case strained are far being understood. Here, we demonstrate scalable, creating large areas localized with (∼150 emitters/um2) WSe2 monolayer. We...
Atomically thin, 2D, and semiconducting transition metal dichalcogenides (TMDs) are seen as potential candidates for complementary oxide semiconductor (CMOS) technology in future nodes. While high-performance field effect transistors (FETs), logic gates, integrated circuits (ICs) made from n-type TMDs such MoS2 WS2 grown at wafer scale have been demonstrated, realizing CMOS electronics necessitates integration of large area p-type semiconductors. Furthermore, the physical separation memory...
Abstract Artificial neural networks have demonstrated superiority over traditional computing architectures in tasks such as pattern classification and learning. However, they do not measure uncertainty predictions, hence can make wrong predictions with high confidence, which be detrimental for many mission-critical applications. In contrast, Bayesian (BNNs) naturally include their model, the weights are represented by probability distributions (e.g. Gaussian distribution). Here we introduce...
Natural intelligence has many dimensions, with some of its most important manifestations being tied to learning about the environment and making behavioral changes. In primates, vision plays a critical role in learning. The underlying biological neural networks contain specialized neurons synapses which not only sense process visual stimuli but also learn adapt remarkable energy efficiency. Forgetting an active Mimicking adaptive neurobiological mechanisms for seeing, learning, forgetting...
Metalorganic chemical vapor deposition (MOCVD) is a promising technique for wafer-scale synthesis of MoS2 monolayers 2D field-effect transistors (2D-FETs) and related devices. Epitaxial growth on sapphire provides films that are crystallographically well-oriented but typically contain low-angle grain boundaries (e.g., mirror twins), voids, other defects depending conditions substrate characteristics. In this study, we investigate microstructure, optical properties, characteristics grown by...
Achieving robust and electrically controlled valley polarization in monolayer transition metal dichalcogenides (ML-TMDs) is a frontier challenge for realistic valleytronic applications. Theoretical investigations show that the integration of 2D materials with ferroelectrics promising strategy; however, an experimental demonstration has remained elusive. Here, we fabricate ferroelectric field-effect transistors using ML-WSe2 channel Al0.68Sc0.32N (AlScN) dielectric experimentally demonstrate...
Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded nonvolatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of FeFETs can be limited by a charge imbalance between ferroelectric layer and channel and, low-dimensional semiconductors, also high contact resistance metal electrodes channel. Here, we report significant enhancement in contact-engineered 2D MoS2 Al0.68Sc0.32N...
Limitations in cloud-based computing have prompted a paradigm shift toward all-in-one "edge" devices capable of independent data sensing, computing, and storage. Advanced defense space applications stand to benefit immensely from this due their need for continual operation areas where maintaining remote oversight is difficult. However, the extreme environments relevant these necessitate rigorous testing technologies, with common requirement being hardness ionizing radiation. Two-dimensional...
Abstract As the energy and hardware investments necessary for conventional high‐precision digital computing continue to explode in era of artificial intelligence (AI), a change paradigm that can trade precision resource efficiency is being sought many applications. Stochastic (SC) an attractive alternative since, unlike computers, which require logic gates high transistor volume perform basic arithmetic operations such as addition, subtraction, multiplication, sorting, etc., SC implement...
A true random number generator (TRNG) is essential to ensure information security for Internet of Things (IoT) edge devices. While pseudorandom generators (PRNGs) have been instrumental, their deterministic nature limits application in security-sensitive scenarios. In contrast, hardware-based TRNGs derived from physically unpredictable processes offer greater reliability. This study demonstrates a peripheral-free TRNG utilizing two cascaded three-stage inverters (TSIs) conjunction with an...
Monolayer transition metal dichalcogenides have strong intracovalent bonding. When stacked in multilayers, however, weak van der Waals interactions dominate interlayer mechanical coupling and, thus, influence their lattice vibrations. This study presents the frequency evolution of phonons twisted WS2 bilayers, highly subject to twist angle. The angle between layers is controlled modulate spacing layers, which, turn, affects that probed by Raman spectroscopy. shifts high-frequency E2g1 (Γ)...
In situ optical measurements can reveal bandgap changes in monolayer semiconductor electrodes.
For decades, the fundamental diffraction limit of light has stymied scaling optoelectronics beyond micrometer scale. However, recent studies have shown that devices capable capturing/directing electromagnetic waves can artificially focus incident into sub-wavelength active areas, thus enabling applications such as photodetection and communication in defiance limit. Despite these advancements, ultimate limits photodetectors remained largely untested. Here, we present a two-dimensional (2D)...
Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of FeFETs can be limited by a charge imbalance between ferroelectric layer and channel, low-dimensional semiconductors, also high contact resistance metal electrodes channel. Here, we report significant enhancement in contact-engineered 2D MoS2 channel...
Achieving localized light emission from monolayer two-dimensional (2D) transition metal dichalcogenides (TMDs) embedded in the matrix of another TMD has been theoretically proposed but not experimentally proven. In this study, we used cathodoluminescence performed a scanning transmission electron microscope to unambiguously resolve 2D MoSe2 nanodots varying sizes WSe2 matrix. We observed that strongly depends on nanodot size, wherein is dominated by excitons dots larger than 85 nm and...