Yue Yuan

ORCID: 0000-0002-7249-0411
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About
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Research Areas
  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Graphene research and applications
  • 2D Materials and Applications
  • Force Microscopy Techniques and Applications
  • Neuroscience and Neural Engineering
  • Semiconductor materials and devices
  • MXene and MAX Phase Materials
  • Supercapacitor Materials and Fabrication
  • Molecular Junctions and Nanostructures
  • Advanced Cellulose Research Studies
  • Computer Graphics and Visualization Techniques
  • Advancements in Battery Materials
  • Advancements in Semiconductor Devices and Circuit Design
  • Nanomaterials for catalytic reactions
  • Tribology and Lubrication Engineering
  • Enhanced Oil Recovery Techniques
  • Quantum-Dot Cellular Automata
  • Heat and Mass Transfer in Porous Media
  • Aerogels and thermal insulation
  • Fluid Dynamics and Thin Films
  • Organic Light-Emitting Diodes Research
  • Extraction and Separation Processes
  • Machine Learning and ELM
  • Metal Forming Simulation Techniques

King Abdullah University of Science and Technology
2022-2025

Shaanxi University of Science and Technology
2011-2023

Shahjalal University of Science and Technology
2021

Guangdong Technion-Israel Institute of Technology
2020

Anhui University
2019

University of Science and Technology of China
2016

Northwest Minzu University
2012

Exploiting the excellent electronic properties of two-dimensional (2D) materials to fabricate advanced circuits is a major goal for semiconductor industry1,2. However, most studies in this field have been limited fabrication and characterization isolated large (more than 1 µm2) devices on unfunctional SiO2-Si substrates. Some integrated monolayer graphene silicon microchips as large-area 500 interconnection3 channel transistors (roughly 16.5 (refs. 4,5), but all cases integration density was...

10.1038/s41586-023-05973-1 article EN cc-by Nature 2023-03-27

Abstract The semiconductors industry has put its eyes on two-dimensional (2D) materials produced by chemical vapour deposition (CVD) because they can be grown at the wafer level with small thickness fluctuations, which is necessary to build electronic devices and circuits. However, CVD-grown 2D contain significant amounts of lattice distortions, degrades performance device increases device-to-device variability. Here we statistically analyse quality commercially available hexagonal boron...

10.1038/s41467-024-48485-w article EN cc-by Nature Communications 2024-05-28

Abstract Memristor‐based electronic memory have recently started commercialization, although its market size is small (~0.5%). Multiple studies claim their potential for hardware implementation of artificial neural networks, advanced data encryption, and high‐frequency switches 5G/6G communication. Application aside, the performance reliability memristors need to be improved increase fit technology standards. groups propose novel nano‐materials beyond phase‐change, metal‐oxides, magnetic...

10.1002/adfm.202213816 article EN Advanced Functional Materials 2023-02-07

Abstract Stochastic resonance is an essential phenomenon in neurobiology, it connected to the constructive role of noise signals that take place neuronal tissues, facilitating information communication, memory, etc. Memristive devices are known be cornerstone hardware neuromorphic applications since they correctly mimic biological synapses many different facets, such as short/long-term plasticity, spike-timing-dependent pair-pulse facilitation, Different types neural networks can built with...

10.1038/s41699-024-00444-1 article EN cc-by npj 2D Materials and Applications 2024-01-30

Resistive switching devices based on the Au/Ti/TiO2/Au stack were developed. In addition to standard electrical characterization by means of I-V curves, scanning thermal microscopy was employed localize hot spots top device surface (linked conductive nanofilaments, CNFs) and perform in-operando tracking temperature in such spots. this way, responses can be simultaneously recorded related each other. a complementary model for simulation (based COMSOL Multiphysics) implemented order link...

10.1021/acsaelm.3c01727 article EN cc-by ACS Applied Electronic Materials 2024-02-15

Improving hole injection through the surface modification of indium tin oxide (ITO) with self-assembled monolayers (SAMs) is a promising method for modulating carrier in organic light-emitting diodes (OLEDs). However, developing SAMs required characteristics remains daunting challenge. Herein, we functionalize ITO various phosphonic acid and evaluate SAM-modified anodes terms their work function (WF), molecular distribution, coverage, electrical conductivity. We fabricate characterize green...

10.1021/acsami.4c08088 article EN ACS Applied Materials & Interfaces 2024-07-18

Abstract Hardware implementations of artificial neural networks (ANNs)—the most advanced which are made millions electronic neurons interconnected by hundreds synapses—have achieved higher energy efficiency than classical computers in some small-scale data-intensive computing tasks 1 . State-of-the-art neuromorphic computers, such as Intel’s Loihi 2 or IBM’s NorthPole 3 , implement ANNs using bio-inspired neuron- and synapse-mimicking circuits complementary metal–oxide–semiconductor (CMOS)...

10.1038/s41586-025-08742-4 article EN cc-by Nature 2025-03-26

A 2D hexagonal boron nitride (h-BN) memristor with inkjet-printed silver electrodes is fabricated for ultra-stable random telegraph noise and connected to a custom, low-cost true number generator using commercial components.

10.1039/d2nr06222d article EN cc-by Nanoscale 2022-12-29

Abstract Next‐generation nanodevices require 2D material synthesis on insulating substrates. However, growing high‐quality 2D‐layered materials, such as hexagonal boron nitride (hBN) and graphene, insulators is challenging owing to the lack of suitable metal catalysts, imperfect lattice matching with substrates, other factors. Therefore, developing a generally applicable approach for realizing layers remains crucial, despite numerous strategies being explored. Herein, universal strategy...

10.1002/adma.202310921 article EN Advanced Materials 2023-12-20

Conductive atomic force microscopy (CAFM) is a powerful technique to investigate electrical and mechanical properties of materials devices at the nanoscale. However, its main challenge reliability probe tips their interaction with samples. The most common used in CAFM studies are made Si coated thin (∼20 nm) film Pt or Pt-rich alloys (such as Pt/Ir), but this can degrade fast due high current densities (>102A/cm2) frictions. doped diamond solid more durable, they significantly expensive...

10.1021/acsami.3c01102 article EN cc-by ACS Applied Materials & Interfaces 2023-04-21

Abstract Conductive atomic force microscopy (CAFM) analyzes electronic phenomena in materials and devices with nanoscale lateral resolution, it is widely used by companies, research institutions, universities. Most data published the field of CAFM collected air at a relative humidity (RH) 30–60%. However, effect RH remains unclear because previous studies often made contradictory claims, plus number samples locations tested scarce. Moreover, on this topic did not apply current limitations,...

10.1002/adma.202405932 article EN cc-by Advanced Materials 2024-09-11

We consider the optimal convergence rate in periodic homogenization of second order elliptic systems involving singular perturbations bounded domains. By introducing proper auxiliary functions, we establish sharp L2(Ω) by using duality argument.

10.1063/1.5124140 article EN Journal of Mathematical Physics 2019-11-01

Abstract Resistive switching phenomenon is normally studied through fabricating two types of metal/insulator/metal (MIM) test structures: i) using a shadow mask to pattern dot‐like top electrodes (on an insulator/metal sample) that also serve as pad connect the probe station tips and ii) photolithography metallic wires rotated 90° cross at one point sandwich insulator, are attached large pads tips. The second method most recommendable because size MIM‐like memristor can be reduced; however,...

10.1002/aelm.201901226 article EN Advanced Electronic Materials 2020-01-31

Resistive random access memories (RRAM), based on the formation and rupture of conductive nanoscale filaments, have attracted increased attention for application in neuromorphic in-memory computing. However, this technology is, part, limited by its variability, which originates from stochastic extreme heating filaments. In study, we used scanning thermal microscopy (SThM) to assess effect filament-induced heat spreading surface metal oxide RRAMs with different device designs. We evaluate...

10.1021/acsaelm.3c00782 article EN cc-by ACS Applied Electronic Materials 2023-09-05

Variability in memristive devices based on h-BN dielectrics is studied depth. Different numerical techniques to extract the reset voltage are described and corresponding cycle-to-cycle variability characterized by means of coefficient variance. The charge-flux domain was employed develop one extraction techniques, calculation integrals current obtain charge flux allows minimize effects electric noise inherent stochasticity resistive switching measurement data. A model reproduce versus curves...

10.1109/ted.2022.3197677 article EN IEEE Transactions on Electron Devices 2022-08-30
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