A5021479723- Advanced Memory and Neural Computing
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Neuroscience and Neural Engineering
- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Photoreceptor and optogenetics research
- Silicon Carbide Semiconductor Technologies
- Physical Unclonable Functions (PUFs) and Hardware Security
- Electronic and Structural Properties of Oxides
- Graphene research and applications
- ZnO doping and properties
- MXene and MAX Phase Materials
- Quantum-Dot Cellular Automata
- Ferroelectric and Piezoelectric Materials
- Transition Metal Oxide Nanomaterials
- Neural dynamics and brain function
- Nanowire Synthesis and Applications
- 2D Materials and Applications
- Force Microscopy Techniques and Applications
- Electrostatic Discharge in Electronics
- Machine Learning and ELM
- Thin-Film Transistor Technologies
Ferrari (Italy)
2016-2025
University of Modena and Reggio Emilia
2016-2025
Intel (United Kingdom)
2022
IMEC
2020
TU Wien
2020
University of Udine
2017
Abstract Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for fabrication electronic devices, with nonvolatile memories being those that have received most attention. The presence and quality RS phenomenon in system can be studied using different prototype cells, performing experiments, displaying figures merit, developing computational analyses. Therefore, real usefulness impact findings...
The use of 2D materials to improve the capabilities electronic devices is a promising strategy that has recently gained much interest in both academia and industry. However, while research metallic semiconducting well established, detailed knowledge applications insulators are still scarce. In this paper, presence resistive switching (RS) multilayer hexagonal boron nitride ( h ‐BN) studied using different electrode materials, family ‐BN‐based random access memories with tunable engineered....
In this paper, we investigate the random telegraph noise (RTN) in hafnium-oxide resistive access memories high state (HRS). The current fluctuations are analyzed by decomposing multilevel RTN signal into two-level traces using a factorial hidden Markov model approach, which allows extracting properties of traps originating RTN. fluctuations, statistically on devices with different stack reset at voltages, attributed to activation and deactivation defects oxidized tip conductive filament,...
Abstract Advanced data encryption requires the use of true random number generators (TRNGs) to produce unpredictable sequences bits. TRNG circuits with high degree randomness and low power consumption may be fabricated by using telegraph noise (RTN) current signals produced polarized metal/insulator/metal (MIM) devices as entropy source. However, RTN MIM made traditional insulators, i.e., transition metal oxides like HfO 2 Al O 3 , are not stable enough due formation lateral expansion defect...
We present a simple empirical expression describing hafnium-based RRAM resistance at different reset voltages and current compliances. The model that we propose describes filament measured low ( ~ 0.1 V) reading voltage in both low-resistance state (LRS) high-resistance (HRS). proposed description confirms conduction LRS is ohmic (after forming with sufficiently high compliance) consistent the earlier of HRS as controlled by trap-assisted electron transfer via traps oxidized portion...
This paper presents a physics-based compact model for the program window in HfOx resistive random access memory devices, defined as ratio of resistances high resistance state (HRS) and low (LRS). allows extracting characteristics conductive filament (CF) HRS. For given forming current compliance limit, is shown to be correlated thickness reoxidized portion CF HRS, which can modulated by reset voltage amplitude. On other hand, statistical distribution depends exponentially on barrier...
In this paper, we report about the derivation of a physics-based compact model random telegraph noise (RTN) in HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based resistive access memory (RRAM) devices. Starting from physics charge transport, which is different high states and low states, explore mechanisms responsible for RTN exploiting hybrid approach, based on self-consistent simulations geometrical simplifications. Then,...
Low-power smart devices are becoming pervasive in our world. Thus, relevant research efforts directed to the development of innovative low power computing solutions that enable in-memory computations logic-operations, thus avoiding von Neumann bottleneck, i.e., known showstopper traditional architectures. Emerging non-volatile memory technologies, particular Resistive Random Access memories, have been shown be particularly suitable implement logic-in-memory (LIM) circuits based on material...
R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> degradation due to stress in GaN-based power devices is a critical issue that limits, among other effects, long-term stable operation. Here, by means of 2-D device simulations, we show the increase and decrease during recovery experiments carbon-doped AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) can be explained with model based on emission,...
Abstract Some memristors with metal/insulator/metal (MIM) structure have exhibited random telegraph noise (RTN) current signals, which makes them ideal to build true number generators (TRNG) for advanced data encryption. However, there is still no clear guide on how essential manufacturing parameters like materials selection, thicknesses, deposition methods, and device lateral size can influence the quality of RTN signal. In this paper, an exhaustive statistical analysis signals produced by...
Abstract Ohmic, memristive synaptic weights are fabricated with a back‐end‐of‐line compatible process, based on 3.5 nm HfZrO 4 thin film crystallized in the ferroelectric phase at only 400 °C. The current density is increased by three orders of magnitude compared to state‐of‐the‐art. use metallic oxide interlayer, WO x , allows excellent retention (only 6% decay after 10 6 s) and endurance (10 full switching cycles). On/Off 7 small device‐to‐device variability (<5%) make them promising...
This paper presents two dimensional (2D) RRAM devices exploiting multilayer hexagonal boron nitride (h-BN) as active switching layer. Different electrodes including Cu, Ni-doped Cu (CuNi) and graphene (G) are considered. The show low set/reset voltages, high on/off current ratio, good endurance very overall variability. Experimental results interpreted using a novel simulation framework, which proves that the memory behavior is enabled by manipulation of (B)-deficient conductive filament...
The development of a robust and secure hardware for the Internet Things (IoT) edge computing requires improvements in existing low-power low-cost security primitives. Among various available technologies, true random number generators (TRNGs) that leverage telegraph noise (RTN) from nanoelectronics devices have emerged as effective solutions. However, temporal instabilities RTN signal, such DC drift temporary inhibition, are few key reliability challenges TRNG circuits. In this study, we...

 This paper presents a new technique to analyze the characteristics of multi-level random telegraph noise (RTN). RTN is defined as an abrupt switching either current or voltage between discrete values result trapping/de-trapping activity. signal properties are deduced exploiting factorial hidden Markov model (FHMM). The proposed method considers measured superposition many two-levels RTNs, each represented by chain and associated single trap, it used retrieve statistical chain. These...
A 2D hexagonal boron nitride (h-BN) memristor with inkjet-printed silver electrodes is fabricated for ultra-stable random telegraph noise and connected to a custom, low-cost true number generator using commercial components.
As devices scale closer to the atomic size, a complete understanding of physical mechanisms involving defects in high-κ dielectrics is essential improve performance electron and mitigate key reliability phenomena, such as Random Telegraph Noise (RTN). In fact, crucial aspects HfO2 are still under investigation (e.g., presence metastable states their properties), but it well known that oxygen vacancies (V+s) ions (O0s) most abundant HfO2. this work, we use simulations gain insights into RTN...
In this letter, we propose a dispersion-aware program-verify algorithm to enable reliable multi-bit operations in HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based RRAM. The significant intrinsic dispersion of the resistive states, typically hindering operations, is exploited devise scheme which enables with unique properties failure resilience and adaptability degradation. We show that an appropriate choice parameters can...
In this paper, we thoroughly investigate the characteristics of TiN/Ti/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /TiN resistive random access memory (RRAM) device. The physical mechanisms involved in device operations are comprehensively explored from atomistic standpoint. Self-consistent physics simulations based on a multi-scale approach employed to achieve complete understanding physics. latter includes different charge and...
Memristors have shown an extraordinary potential to emulate the plastic and dynamic electrical behaviors of biological synapses been already used construct neuromorphic systems with in-memory computing unsupervised learning capabilities; moreover, small size simple fabrication process memristors make them ideal candidates for ultradense configurations. So far, properties memristive electronic (i.e., potentiation/depression, relaxation, linearity) extensively analyzed by several groups....
Abstract Fluorite‐structured ferroelectrics are one of the most promising material systems for emerging memory technologies. However, when integrated into electronic devices, these materials exhibit strong imprint effects that can lead to a failure during writing or retention operations. To improve performance and reliability it is cardinal understand physical mechanisms underlying operation. In this work, comparison First‐Order Reversal Curves measurements with new gradual switching...