A5026635084- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Graphene research and applications
- 2D Materials and Applications
- Force Microscopy Techniques and Applications
- Neuroscience and Neural Engineering
- Integrated Circuits and Semiconductor Failure Analysis
- Electronic and Structural Properties of Oxides
- MXene and MAX Phase Materials
- Advancements in Semiconductor Devices and Circuit Design
- Molecular Junctions and Nanostructures
- Photoreceptor and optogenetics research
- Advanced Photocatalysis Techniques
- Nanowire Synthesis and Applications
- Advanced Sensor and Energy Harvesting Materials
- Advanced Semiconductor Detectors and Materials
- Semiconductor Quantum Structures and Devices
- Surface and Thin Film Phenomena
- Diamond and Carbon-based Materials Research
- Transition Metal Oxide Nanomaterials
- Neural dynamics and brain function
- Thermal properties of materials
- Ga2O3 and related materials
- Perovskite Materials and Applications
King Abdullah University of Science and Technology
2020-2025
National University of Singapore
2024-2025
Ida Darwin hospital
2022-2024
University of Cambridge
2022-2024
National Autonomous University of Honduras
2024
Kootenay Association for Science & Technology
2023
University of Toronto
2023
Institut für Mikroelektronik Stuttgart
2021-2022
Polytechnic University of Turin
2021-2022
Soochow University
2014-2021
Silicon's sensitivity to corrosion has hindered its use in photoanode applications. We found that deposition of a ~2-nanometer nickel film on n-type silicon (n-Si) with native oxide affords high-performance metal-insulator-semiconductor for photoelectrochemical (PEC) water oxidation both aqueous potassium hydroxide (KOH, pH = 14) and borate buffer (pH 9.5) solutions. The Ni acted as surface protection layer against nonprecious metal electrocatalyst oxygen evolution. In 1 M KOH, the Ni/n-Si...
Abstract Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for fabrication electronic devices, with nonvolatile memories being those that have received most attention. The presence and quality RS phenomenon in system can be studied using different prototype cells, performing experiments, displaying figures merit, developing computational analyses. Therefore, real usefulness impact findings...
Abstract Modern computation based on von Neumann architecture is now a mature cutting-edge science. In the architecture, processing and memory units are implemented as separate blocks interchanging data intensively continuously. This transfer responsible for large part of power consumption. The next generation computer technology expected to solve problems at exascale with 10 18 calculations each second. Even though these future computers will be incredibly powerful, if they type...
The use of 2D materials to improve the capabilities electronic devices is a promising strategy that has recently gained much interest in both academia and industry. However, while research metallic semiconducting well established, detailed knowledge applications insulators are still scarce. In this paper, presence resistive switching (RS) multilayer hexagonal boron nitride ( h ‐BN) studied using different electrode materials, family ‐BN‐based random access memories with tunable engineered....
Graphene and related materials (GRMs) are promising candidates for the fabrication of resistive random access memories (RRAMs). Here, this emerging field is analyzed, classified, evaluated, performance a number RRAM prototypes using GRMs summarized. oxide, amorphous carbon films, transition metal dichalcogenides, hexagonal boron nitride black phosphorous can be used as switching media, in which governed either by migration intrinsic species or penetration metallic ions from adjacent layers....
Exploiting the excellent electronic properties of two-dimensional (2D) materials to fabricate advanced circuits is a major goal for semiconductor industry1,2. However, most studies in this field have been limited fabrication and characterization isolated large (more than 1 µm2) devices on unfunctional SiO2-Si substrates. Some integrated monolayer graphene silicon microchips as large-area 500 interconnection3 channel transistors (roughly 16.5 (refs. 4,5), but all cases integration density was...
Abstract Artificial Intelligence (AI) is currently experiencing a bloom driven by deep learning (DL) techniques, which rely on networks of connected simple computing units operating in parallel. The low communication bandwidth between memory and processing conventional von Neumann machines does not support the requirements emerging applications that extensively large sets data. More recent paradigms, such as high parallelization near-memory computing, help alleviate data bottleneck to some...
Resistive memories are outstanding electron devices that have displayed a large potential in plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and performance been notably improved the last few years to cope with requirements massive industrial production. However, most important hurdle progress their development is so-called cycle-to-cycle variability, which inherently rooted resistive switching mechanism...
Two-dimensional-material-based memristor arrays hold promise for data-centric applications such as artificial intelligence and big data. However, accessing individual cells effectively controlling sneak current paths remain challenging. Here, we propose a van der Waals engineering approach to create one-transistor-one-memristor (1T1M) by assembling the emerging two-dimensional ferroelectric CuCrP2S6 with MoS2 h-BN. The memory cell exhibits high resistance tunability (106), low (120 fA),...
Resistive switching (RS) phenomenon in the HfO2 dielectric has been indirectly observed at device level previous studies using metal-insulator-metal structures, but its origin remains unclear. In this work, enhanced conductive atomic force microscope (ECAFM), we have able to obtain situ direct observation of RS with nanometric resolution. The ECAFM measurements reveal that filaments exhibiting are primarily formed grain boundaries, which were shown especially low breakdown voltage due their...