A5089712120- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Advancements in Semiconductor Devices and Circuit Design
- Neuroscience and Neural Engineering
- Integrated Circuits and Semiconductor Failure Analysis
- Particle Detector Development and Performance
- Silicon and Solar Cell Technologies
- Semiconductor materials and interfaces
- Electronic and Structural Properties of Oxides
- Advanced MEMS and NEMS Technologies
- Radiation Detection and Scintillator Technologies
- Analytical Chemistry and Sensors
- Radiation Effects in Electronics
- Mechanical and Optical Resonators
- CCD and CMOS Imaging Sensors
- Copper Interconnects and Reliability
- Silicon Nanostructures and Photoluminescence
- Physical Unclonable Functions (PUFs) and Hardware Security
- Advanced Sensor and Energy Harvesting Materials
- MXene and MAX Phase Materials
- Force Microscopy Techniques and Applications
- Neural dynamics and brain function
- Thin-Film Transistor Technologies
- Electrostatic Discharge in Electronics
Institut de Microelectrònica de Barcelona
2015-2024
Consejo Superior de Investigaciones Científicas
2012-2023
Centro Nacional de Microelectrónica
2012-2023
Universitat Autònoma de Barcelona
1996-2023
Microelectronica (Romania)
2023
Universidad de Valladolid
2021
Rochester Institute of Technology
2020
University of Chile
2019
Institut de Ciència de Materials de Barcelona
2015
Unidades Centrales Científico-Técnicas
1989-2011
Resistive memories are outstanding electron devices that have displayed a large potential in plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and performance been notably improved the last few years to cope with requirements massive industrial production. However, most important hurdle progress their development is so-called cycle-to-cycle variability, which inherently rooted resistive switching mechanism...
A simulation study has been performed to analyze resistive switching (RS) phenomena in valence change memories (VCM) based on a HfO2 dielectric. The kernel of the tool consists 3D kinetic Monte Carlo (kMC) algorithm implemented self-consistently with Poisson and heat equations. These VCM devices show filamentary conduction, their RS operation is destruction regeneration an ohmic conductive filament (CF) composed oxygen vacancies. physics underlying described by means processes linked...
Nanomechanical resonators have been monolithically integrated on preprocessed complementary metal-oxide-semiconductor (CMOS) chips. Fabricated resonator systems designed to resonance frequencies up 1.5 MHz. The characterized in ambient air and vacuum conditions display ultrasensitive mass detection air. A sensitivity of 4ag∕Hz has determined by placing a single glycerine drop, having measured weight 57 fg, at the apex cantilever subsequently measuring frequency shift 14.8 kHz. CMOS...
A simple linear electromechanical model for an electrostatically driven resonating cantilever is derived. The has been developed in order to determine dynamic quantities such as the capacitive current flowing through cantilever-driver system at resonance frequency, and it allows us calculate static magnitudes position voltage of collapse or versus deflection characteristic. used demonstrate theoretical sensitivity on attogram scale a mass sensor based nanometre-scale cantilever, analyse...
Prior to any attempt model a charge transport mechanism, precise knowledge of the parameters on which current depends is essential. In this work, soft breakdown (SBD) failure mode ultrathin (3-5 nm) SiO/sub 2/ layers in polysilicon-oxide-semiconductor structures investigated. This conduction regime characterized by large leakage and multilevel fluctuations, both at low applied voltages. order obtain general picture SBD, room-temperature current-voltage (I-V) measurements have been performed...
An in-depth study of reset processes in RRAMs (Resistive Random Access Memories) based on Ni/HfO2/Si-n+ structures has been performed. To do so, we have developed a physically simulator where both ohmic and tunneling conduction regimes are considered along with the thermal description devices. The devices under successfully fabricated measured. experimental data correctly reproduced for single conductive filament as well including several filaments. contribution each regime explained...
A new RRAM simulation tool based on a 3D kinetic Monte Carlo algorithm has been implemented. The redox reactions and migration of cations are developed taking into consideration the temperature electric potential distributions within device dielectric at each time step. filamentary conduction described by obtaining percolation paths formed metallic atoms. Ni/HfO2/Si-n+ unipolar devices have fabricated measured. different experimental characteristics under study reproduced with accuracy means...
Atomic layer deposition (ALD) of Al2O3 is interest for a wide range micro-nanoelectronic applications, where the electrical properties deposited layers can be strongly affected by conditions and post-deposition treatments. In this work, mercury-probe capacitance-voltage characterization carried out on films silicon ALD at different temperatures subjected to various thermal treatments in N2 ambient. Effective positive charges located semiconductor/dielectric interface are encountered lowest...
In this work, the electrical characteristics of different atomic layer deposited high-permittivity dielectric films (Al2O3, HfO2, and a nanolaminate them), with physical thickness about 10 nm, are evaluated. An extensive capacitance-voltage current-voltage characterization at room temperature is carried out on metal-insulator-semiconductor structures fabricated p-type n-type silicon substrates Al as metal gate. HfO2 layers found to exhibit higher constant, but they suffer from largest...
A physical simulation procedure was used to describe the processes behind operation of devices based on TiN/Ti/HfO2/W structures. The equations describing creation and destruction conductive filaments formed by oxygen vacancies are solved in addition heat equation. resistances connected with metal electrodes were also considered. Resistive random access memories analyzed fabricated, many characteristics experimental data reproduced accuracy. Truncated-cone shaped employed model developed...
The relevance of the intrinsic series resistance effect in context resistive random access memory (RRAM) compact modeling is investigated. This notably affects conduction characteristic switching memories so that it becomes an essential factor to consider when fitting experimental data, especially those coming from devices exhibiting so-called snapback and snapforward effects. A thorough description value extraction procedure analysis connection this with set reset transition voltages...
We have analyzed variability in resistive memories (Resistive Random Access Memories, RRAMs) making use of advanced numerical techniques to process experimental measurements and simulations based on the kinetic Monte Carlo technique. The devices employed study were fabricated using TiN/Ti/HfO2/W stack. switching parameters obtained new developed extraction methods. appropriateness parameter methodologies has been checked by comparison simulations; particular, reset set events studied...
In this paper, we report on the main aspects of design, fabrication, and performance a microelectromechanical system constituted by mechanical submicrometer scale resonator (cantilever) readout circuitry used for monitoring its oscillation through detection capacitive current. The CMOS is monolithically integrated with technology that allows combination standard processes novel nanofabrication methods. constitutes an example submicroelectromechanical to be as cantilever-based mass sensor...
A revision of the different numerical techniques employed to extract resistive switching (RS) and modeling parameters is presented. The set reset voltages, commonly used for variability estimation, are calculated memory technologies. methodologies series resistance linked charge-flux memristive approach also described. It found that obtained cycle-to-cycle (C2C) depends on technique used. This result important, it implies when analyzing C2C variability, extraction should be described perform...
Abstract Memristive devices have shown a great potential for non-volatile memory circuits and neuromorphic computing. For both applications it is essential to know the physical mechanisms behind resistive switching; in particular, time response external voltage signals. To shed light these issues we studied role played by applied ramp rate electrical properties of TiN/Ti/HfO 2 /W metal–insulator–metal switching devices. Using an ad hoc experimental set-up, current–voltage characteristics...
A new statistical analysis is presented to assess cycle-to-cycle variability in resistive memories. This method employs two-dimensional (2D) distributions of parameters analyse both set and reset voltages currents, coupled with a 2D coefficient variation (CV). methodology significantly enhances the analysis, providing more thorough comprehensive understanding data compared conventional one-dimensional methods. Resistive switching (RS) from two different technologies based on hafnium oxide...