A5049881097- Advanced Memory and Neural Computing
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Neuroscience and Neural Engineering
- Silicon and Solar Cell Technologies
- Semiconductor materials and interfaces
- Electronic and Structural Properties of Oxides
- Thin-Film Transistor Technologies
- Advanced Surface Polishing Techniques
- Nanowire Synthesis and Applications
- Physical Unclonable Functions (PUFs) and Hardware Security
- MXene and MAX Phase Materials
- Neural dynamics and brain function
- Metal and Thin Film Mechanics
- CCD and CMOS Imaging Sensors
- Radiation Effects in Electronics
- Silicon Carbide Semiconductor Technologies
- Photoreceptor and optogenetics research
- Neural Networks and Reservoir Computing
- 3D IC and TSV technologies
- Transition Metal Oxide Nanomaterials
- Copper Interconnects and Reliability
- Neural Networks and Applications
Institut de Microelectrònica de Barcelona
2015-2024
Consejo Superior de Investigaciones Científicas
2012-2023
Centro Nacional de Microelectrónica
2013-2023
Microelectronica (Romania)
2023
Universitat Autònoma de Barcelona
2015-2023
IMEC
2006-2021
Rochester Institute of Technology
2020
University of Chile
2019
Institut de Ciència de Materials de Barcelona
2015
KU Leuven
2007-2011
Resistive memories are outstanding electron devices that have displayed a large potential in plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and performance been notably improved the last few years to cope with requirements massive industrial production. However, most important hurdle progress their development is so-called cycle-to-cycle variability, which inherently rooted resistive switching mechanism...
A simulation study has been performed to analyze resistive switching (RS) phenomena in valence change memories (VCM) based on a HfO2 dielectric. The kernel of the tool consists 3D kinetic Monte Carlo (kMC) algorithm implemented self-consistently with Poisson and heat equations. These VCM devices show filamentary conduction, their RS operation is destruction regeneration an ohmic conductive filament (CF) composed oxygen vacancies. physics underlying described by means processes linked...
An in-depth study of reset processes in RRAMs (Resistive Random Access Memories) based on Ni/HfO2/Si-n+ structures has been performed. To do so, we have developed a physically simulator where both ohmic and tunneling conduction regimes are considered along with the thermal description devices. The devices under successfully fabricated measured. experimental data correctly reproduced for single conductive filament as well including several filaments. contribution each regime explained...
A new RRAM simulation tool based on a 3D kinetic Monte Carlo algorithm has been implemented. The redox reactions and migration of cations are developed taking into consideration the temperature electric potential distributions within device dielectric at each time step. filamentary conduction described by obtaining percolation paths formed metallic atoms. Ni/HfO2/Si-n+ unipolar devices have fabricated measured. different experimental characteristics under study reproduced with accuracy means...
A physical simulation procedure was used to describe the processes behind operation of devices based on TiN/Ti/HfO2/W structures. The equations describing creation and destruction conductive filaments formed by oxygen vacancies are solved in addition heat equation. resistances connected with metal electrodes were also considered. Resistive random access memories analyzed fabricated, many characteristics experimental data reproduced accuracy. Truncated-cone shaped employed model developed...
The relevance of the intrinsic series resistance effect in context resistive random access memory (RRAM) compact modeling is investigated. This notably affects conduction characteristic switching memories so that it becomes an essential factor to consider when fitting experimental data, especially those coming from devices exhibiting so-called snapback and snapforward effects. A thorough description value extraction procedure analysis connection this with set reset transition voltages...
We have analyzed variability in resistive memories (Resistive Random Access Memories, RRAMs) making use of advanced numerical techniques to process experimental measurements and simulations based on the kinetic Monte Carlo technique. The devices employed study were fabricated using TiN/Ti/HfO2/W stack. switching parameters obtained new developed extraction methods. appropriateness parameter methodologies has been checked by comparison simulations; particular, reset set events studied...
A revision of the different numerical techniques employed to extract resistive switching (RS) and modeling parameters is presented. The set reset voltages, commonly used for variability estimation, are calculated memory technologies. methodologies series resistance linked charge-flux memristive approach also described. It found that obtained cycle-to-cycle (C2C) depends on technique used. This result important, it implies when analyzing C2C variability, extraction should be described perform...
Abstract Memristive devices have shown a great potential for non-volatile memory circuits and neuromorphic computing. For both applications it is essential to know the physical mechanisms behind resistive switching; in particular, time response external voltage signals. To shed light these issues we studied role played by applied ramp rate electrical properties of TiN/Ti/HfO 2 /W metal–insulator–metal switching devices. Using an ad hoc experimental set-up, current–voltage characteristics...
A new statistical analysis is presented to assess cycle-to-cycle variability in resistive memories. This method employs two-dimensional (2D) distributions of parameters analyse both set and reset voltages currents, coupled with a 2D coefficient variation (CV). methodology significantly enhances the analysis, providing more thorough comprehensive understanding data compared conventional one-dimensional methods. Resistive switching (RS) from two different technologies based on hafnium oxide...
The impact of the dielectric thickness, forming polarity, and current compliance on self-rectifying current-voltage(I-V) characteristics Ni/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /n <sup xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -Si resistive random access memory (RRAM) devices was investigated. obtained results indicate that these three aspects not only play a role in postforming currents but also affect switching...
In this letter, a cell with the parallel combination of two TiN/Ti/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /W resistive random access memory (RRAM) devices is studied for generation unpredictable bits. Measurements confirm that simultaneous SET operation in which one RRAMs switches to low-resistance state an process showing properties different sets cells. Furthermore, given device pair, same during subsequent write...
As theoretically predicted by Prof. Chua, the input signal frequency has a major impact on electrical behavior of memristors. According with one so-called fingerprints such devices, resistive window, i.e. difference between low and high resistance states, shrinks as increases. Physically, this effect stems from incapability ions/vacancies to follow external stimulus. In terms behavior, collapse window can be ascribed shift set reset voltages toward higher values. addition, for fixed...
In this paper, the presence of filamentary current instabilities in high resistance state Ni/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based RRAM devices and their associated fluctuations mechanisms are explored. After systematic measurements, advanced weighted time-lag plot method is employed to accurately identify contribution multiple electrically active defects minimize negative effect background noise. Special attention...
In this work, the impact of different HfO 2 /Al O 3 -based multilayer dielectric stack (DS) configurations on electrical characteristics and resistive switching (RS) performance Ni/Insulator/Silicon devices has been systematically investigated.Significant differences are observed in fabricated bilayer, trilayer pentalayer stacks compared to a single layer same physical thickness.The RS analysis shown similar low resistance state currents set voltages for all DS combinations whereas at high...