A5091237342- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Semiconductor materials and devices
- Neuroscience and Neural Engineering
- Electronic and Structural Properties of Oxides
- Acoustic Wave Resonator Technologies
- MXene and MAX Phase Materials
- Ferroelectric and Piezoelectric Materials
- Advanced Thermoelectric Materials and Devices
- Electrocatalysts for Energy Conversion
- Advanced Data Storage Technologies
- Transition Metal Oxide Nanomaterials
- Nanomaterials for catalytic reactions
- Parallel Computing and Optimization Techniques
- Solid-state spectroscopy and crystallography
- Thermography and Photoacoustic Techniques
- Ultrasonics and Acoustic Wave Propagation
- Interconnection Networks and Systems
- Advancements in Semiconductor Devices and Circuit Design
- nanoparticles nucleation surface interactions
- Surface Roughness and Optical Measurements
Universidad de Valladolid
2020-2024
Electrochemical Society
2021
Rochester Institute of Technology
2020
Abstract Memristive devices have shown a great potential for non-volatile memory circuits and neuromorphic computing. For both applications it is essential to know the physical mechanisms behind resistive switching; in particular, time response external voltage signals. To shed light these issues we studied role played by applied ramp rate electrical properties of TiN/Ti/HfO 2 /W metal–insulator–metal switching devices. Using an ad hoc experimental set-up, current–voltage characteristics...
Thin HfO2 films were grown by atomic layer deposition on chemical vapor-deposited large-area graphene. The graphene was transferred, prior to the of overlayer, bottom dielectric pregrown Si/TiN substrate. Either HfCl4 or Hf[N(CH3)(C2H5)]4 used as metal precursor for layer. O2 plasma-assisted process applied growing from also top To improve transfer, effects surface pretreatments as-grown and aged Si/TiN/HfO2 substrates studied compared. retained its integrity after plasma processes. Studies...
The dependence of the current in TiN/Ti/HfO2/W devices on temperature is investigated range from 78 K to 340 K. Resistive switching cycles at are conducted explore thermal filament configurations with different intermediate resistance states. less conductive states show an increase as rises, while fully formed displays a metallic-like behavior. A comprehensive model, based Stanford Model including series resistance, proposed and successfully validated by experimental data. interplay between...
In the attempt to understand behavior of HfO2-based resistive switching devices at low temperatures, TiN/Ti/HfO2/W metal–insulator–metal were fabricated; atomic layer deposition technique was used grow high-k layer. After performing an electroforming process room temperature, device cooled in a cryostat carry out 100 current–voltage cycles several temperatures ranging from “liquid nitrogen temperature” 350 K. The measurements showed semiconducting high and resistance states. state, hopping...
An in-depth simulation and experimental study has been performed to analyze thermal effects on the variability of resistive memories. Kinetic Monte Carlo (kMC) simulations, that reproduce well nonlinearity stochasticity switching devices, have employed explain results. The series resistance transition voltages currents extracted from devices based TiN/Ti/HfO2/W stack we fabricated measured at temperatures ranging 77 K 350 K. We observed for all magnitudes analyzed was much higher low...
HfO2 and Fe2O3 thin films laminated stacks were grown by atomic layer deposition at 350 °C from hafnium tetrachloride, ferrocene, ozone. Nonlinear, saturating, hysteretic magnetization was recorded in the films. Magnetization expectedly dominated increasing content of Fe2O3. However, coercive force could also be enhanced choice appropriate ratios nanolaminated structures. Saturation observed measurement temperature range 5-350 K, decreasing towards higher temperatures with films' thicknesses...
In this letter, we study the impact of temperature on resistive switching effect TiN/Ti/HfO2/W metal–insulator-metal devices. An analysis conduction mechanisms is made, with low resistance state being ruled by nearest neighbor hopping, while in high dominated Schottky emission. Taking into account filamentary mechanism behind effect, a thorough emission allows for calculation gap between conductive filament tip and metal electrode state. We report an increase when lowers below certain value....
In this study, the resistive switching phenomena in TiN/Ti/HfO2/Ti metal–insulator–metal stacks is investigated, mainly focusing on analysis of set and reset transitions. The electrical measurements a wide temperature range reveal that transitions require less voltage (and thus, energy) as rises, with process being much more sensitive. main conduction mechanism both resistance states Space-charge-limited Conduction, but high conductivity state also shows Schottky emission, explaining its...
In recent years, several materials and metal-insulator-metal devices are being intensively studied as prospective non-volatile memories due to their resistive switching effect. this work, thickness-dependent polarity was observed in TiN/Ti/HfO2/Pt structures the sign of voltages at which SET RESET occur depended on film thickness. A thorough revision previous literature bipolar changes is made order condense knowledge subject a brief comprehensible way explain experimental measurements. The...
TiN/Ti/HfO2/Pt resistive switching devices have been fabricated, measured, and modeled. After programming the in low resistance state, current–voltage characteristic below reset voltage was measured at different temperatures (from 90 to 350 K). A weak but complex temperature dependence obtained for several regimes. These memristors belong a wider set known as valence change memories, whose conductance is determined by formation of conductive filaments (CFs) linked high density oxygen...
The switching dynamics of TiN/Ti/HfO2/W-based resistive memories is investigated. analysis consisted in the systematic application voltage sweeps with different ramp rates and temperatures. obtained results give clear insight into role played by transient thermal effects on device operation. Both kinetic Monte Carlo simulations a compact modeling approach based Dynamic Memdiode Model are considered this work aim assessing, terms their respective scopes, nature physical processes that...
Crystal structure and electrical properties of hafnium-praseodymium oxide thin films grown by atomic layer deposition on ruthenium substrate electrodes were characterized compared with those undoped HfO
Three topologies of TiN/Ti/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /W resistive switching memories (RRAM) are proposed in this work: crossbar, isolated and isolated-crossbar configurations. All configurations use the same sequence technological processes. The different obtained by customizing layouts corresponding to bottom electrode (W), silicon oxide layer that is deposited on electrode. A comparative study mechanisms three...
Abstract Atomic layer deposition method was used to grow thin films consisting of ZrO 2 and MnO x layers. Magnetic electric properties were studied deposited at 300 °C. Some characteristics the manganese(III)acetylacetonate ozone process investigated, such as dependence growth rate on temperature film crystallinity. All partly crystalline in their as-deposited state. Zirconium oxide contained cubic tetragonal phases , while manganese shown consist Mn O 3 4 phases. exhibited nonlinear...
The use of thin layers amorphous hafnium oxide has been shown to be suitable for the manufacture Resistive Random-Access memories (RRAM). These are great interest because their simple structure and non-volatile character. They particularly appealing as they good candidates substituting flash memories. In this work, performance MIM that takes part a 4 kbit memory array based on 1-transistor-1-resistance (1T1R) cells was studied in terms control intermediate states cycle durability. DC small...
Over the past decades, demand for semiconductor memory devices has been steadily increasing, and is currently experiencing an unprecedented boost due to development expansion of artificial intelligence. Among emerging high-density non-volatile memories, resistive random-access (RRAM) one best recourses all kind applications, such as neuromorphic computing or hardware security [1]. Although many materials have evaluated RRAM development, some them with excellent results, HfO 2 established in...
The effort made in recent years the development of new memories has led to a significant advance emerging technologies, which have proven their usefulness not only field memories, but also obtain devices that perform an artificial synapse and thus emulate biological neurons. Among novel concepts, resistive-switching random access memory (RRAM), or memristive device, attracted great deal interest for its ability store multiple states. In fact, operation is based on so-called resistive...
In this work, the unipolar resistive switching behaviour of Ni/HfO2/Si(n+) devices is studied. The structures are characterized using both current and voltage sweeps, with device resistance its cycle-to-cycle variability being analysed in each case. Experimental measurements indicate a clear improvement on states stability when sweeps to induce set reset processes. Moreover, it has been found that these transitions more efficient than as seen analysing power consumption. same results...