A5052591354- Semiconductor materials and devices
- X-ray Diffraction in Crystallography
- Crystallization and Solubility Studies
- Electronic and Structural Properties of Oxides
- Catalytic Processes in Materials Science
- Organometallic Complex Synthesis and Catalysis
- ZnO doping and properties
- Quantum Dots Synthesis And Properties
- Copper Interconnects and Reliability
- Ferroelectric and Negative Capacitance Devices
- Chalcogenide Semiconductor Thin Films
- Luminescence Properties of Advanced Materials
- Crystallography and molecular interactions
- Advanced Memory and Neural Computing
- Synthetic Organic Chemistry Methods
- Metal complexes synthesis and properties
- Carbon dioxide utilization in catalysis
- Semiconductor materials and interfaces
- Ferroelectric and Piezoelectric Materials
- Metal and Thin Film Mechanics
- Copper-based nanomaterials and applications
- Asymmetric Hydrogenation and Catalysis
- Lanthanide and Transition Metal Complexes
- Gas Sensing Nanomaterials and Sensors
- Molecular Junctions and Nanostructures
University of Helsinki
2016-2025
Helsinki Institute of Physics
1999-2022
University of Tartu
2000-2020
Holst Centre (Netherlands)
2020
University of Colorado Boulder
2020
Eindhoven University of Technology
2020
IBM Research - Thomas J. Watson Research Center
2020
Argonne National Laboratory
2020
Hanyang University
2020
North Carolina State University
2020
Atomic layer deposition (ALD) is gaining attention as a thin film method, uniquely suitable for depositing uniform and conformal films on complex three-dimensional topographies. The of given material by ALD relies the successive, separated, self-terminating gas–solid reactions typically two gaseous reactants. Hundreds chemistries have been found variety materials during past decades, mostly inorganic but lately also organic inorganic–organic hybrid compounds. One factor that often dictates...
New materials, namely high-k (high-permittivity) dielectrics to replace SiO(2), Cu Al, and barrier materials for Cu, are revolutionizing modern integrated circuits. These must be deposited as very thin films on structured surfaces. The self-limiting growth mechanism characteristic atomic layer deposition (ALD) facilitates the control of film thickness at level allows large complex features make ALD a promising technique future Recent research has mainly focused required in microelectronics....
A chemical approach to atomic layer deposition (ALD) of oxide thin films is reported here. Instead using water or other compounds for an oxygen source, obtained from a metal alkoxide, which serves as both and source when it reacts with another compound such chloride alkyl. These reactions generally enable oxides many metals. With this approach, alumina film has been deposited on silicon without creating interfacial that otherwise forms easily. This finding adds the benefits ALD method,...
Platinum thin films were grown at 300 °C by atomic layer deposition (ALD) using (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe3) and oxygen as precursors. The had excellent uniformity, low resistivity, low-impurity contents. Structural studies X-ray diffraction showed that the strongly (111) oriented. Growth rates of 0.45 Å cycle-1 obtained with 4 s total cycle times. film thickness was found to linearly depend on number reaction cycles. Also, possible mechanism is discussed.
The first ansa-aminoborane N-TMPN-CH2C6H4B(C6F5)2 (where TMPNH is 2,2,6,6-tetramethylpiperidinyl) which able to reversibly activate H2 through an intramolecular mechanism synthesized. This new substance makes use of the concept molecular tweezers where active N and B centers are located close each other so that one molecule can fit in this void be activated. Because fixed geometry ansa-ammonium-borate it forms a short N−H···H−B dihydrogen bond 1.78 Å as determined by X-ray analysis....
Atomic layer deposition (ALD) is an attractive method to deposit thin films for advanced technological applications such as microelectronics and nanotechnology. One material group in ALD that has matured 10 years proven be of wide importance noble metals. In this paper, thermal metals their oxides reviewed. Noble metal are mostly grown using O2 the nonmetal precursor a combustion-type chemistry. Alternatively, lower growth temperatures can reached via oxide with consecutive reactions ozone...
Divide and conquer: Metal-free systems consisting of amines B(C6F5)3 cleave H2 heterolytically at ambient pressure often room temperature. The efficient reduction benzaldehyde by the product shown in scheme highlights potential such for application hydrogenation reactions.
Abstract CuInSe2 and its alloys with Ga and/or S are among the most promising absorber materials for thin film solar cells. CuInSe2-based cells have shown long-term stability highest conversion efficiencies of all cells, above 19%. Solar based on these also very stable, thus allowing long operational lifetimes. The preparation a cell is multistage process where every step affects resulting performance production cost. other Cu chalcopyrites can be prepared by variety methods, ranging from...
Atomic layer epitaxy (ALE) is a surface controlled, self-limiting method for depositing thin films from gaseous precursors. In this paper the basic principle of ALE and its potentials nanotechnology are introduced. From point view most important benefits excellent conformality easily realized subnanometre level accuracy in controlling film thicknesses, which discussed more detail with selected examples thin-film technology. Studies on preparation laterally confined structures also reviewed....
Perfectly conformal deposition into deep trenches or filling of them without keyhole formation is achieved (see Figure) by atomic layer (ALD). Good conformality can be obtained with other CVD processes, but the unique surface-controlled, self-limiting growth mechanism ALD may give technique significant advantages over methods for future generation IC technology.
ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTTitanium isopropoxide as a precursor in atomic layer epitaxy of titanium dioxide thin filmsMikko Ritala, Markku Leskela, Lauri Niinisto, and Pekka HaussaloCite this: Chem. Mater. 1993, 5, 8, 1174–1181Publication Date (Print):August 1, 1993Publication History Published online1 May 2002Published inissue 1 August 1993https://pubs.acs.org/doi/10.1021/cm00032a023https://doi.org/10.1021/cm00032a023research-articleACS PublicationsRequest reuse...
Abstract Thin films of metallic ruthenium were grown by atomic layer deposition (ALD) in the temperature range 275–400 °C using bis(cyclopentadienyl)ruthenium (RuCp 2 ) and oxygen as precursors. The on thin Al O 3 TiO glass. X‐ray diffraction (XRD) analysis indicated that polycrystalline scanning electron microscopy (SEM) studies showed had excellent conformality. impurity content films, measured time‐of‐flight elastic recoil detection (TOF‐ERDA), very low. All resistivities below 20 μΩ cm.
Dielectric thin films applicable, for instance, as insulating layers in electroluminescent display devices have been studied. In order to improve dielectric characteristics HfO2–Ta2O5 nanolaminates were prepared by atomic layer epitaxy at 325 °C. The evaluated capacitance and current–voltage measurements. By optimizing the thicknesses nanolaminate structures properties, especially leakage current densities, could be tailored remarkably. best showed charge storage factors improved up 8 times...
Reaction mechanisms in atomic layer deposition (ALD) of ruthenium from bis(cyclopentadienyl)ruthenium (RuCp 2 ) and oxygen were studied situ with a quadruple mass spectrometer (QMS) quartz crystal microbalance (QCM). In addition, QMS was used to study ALD platinum (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe 3 oxygen. The studies showed that the reaction by-products H O CO released during both metal precursor pulses. Adsorbed on surface thus oxidizes part ligands pulse. remaining...
Abstract Titanium dioxide thin films were grown by atomic layer deposition (ALD) at 200–400 °C from a new titanium precursor, tetramethoxide, and water. As compared with other alkoxides studied earlier, methoxide shows the highest stability respect to thermal decomposition, can thus be used over widest range of temperatures. The deposited 250 above polycrystalline anatase structure, whereas those 200 amorphous. Except for film °C, contained only minor amounts carbon hydrogen residues....
Four new 1,4-diaza-2,3-dimethylbutadiene ligands (Ar−NC(CH3)−(H3C)CNAr; Ar: 3a = 2,6-diphenylphenyl; 3b 2,6-di(4-OCH3-phenyl)phenyl; 3c 2,6-di(4-tert-butyl-phenyl)phenyl; 3d 2,6-di(3,5-dimethylphenyl)phenyl) as well the palladium dichloride complexes 4a−c and methyl monochloride derivatives 5a−c were prepared, their polymerization behavior was investigated. The corresponding nickel species 6a−c tested for insertion of ethene by in situ reactions 3a−c with (DME)NiBr2. are accessible a...