Aivar Tarre

ORCID: 0000-0003-1518-2989
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About
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Research Areas
  • Semiconductor materials and devices
  • Electronic and Structural Properties of Oxides
  • ZnO doping and properties
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Memory and Neural Computing
  • Gas Sensing Nanomaterials and Sensors
  • Catalytic Processes in Materials Science
  • Metal and Thin Film Mechanics
  • Optical Coatings and Gratings
  • Fuel Cells and Related Materials
  • Electrocatalysts for Energy Conversion
  • Corrosion Behavior and Inhibition
  • Acoustic Wave Resonator Technologies
  • Semiconductor materials and interfaces
  • Anodic Oxide Films and Nanostructures
  • Advanced battery technologies research
  • Graphene research and applications
  • Ga2O3 and related materials
  • Copper-based nanomaterials and applications
  • Copper Interconnects and Reliability
  • Transition Metal Oxide Nanomaterials
  • Advanced ceramic materials synthesis
  • Electron and X-Ray Spectroscopy Techniques
  • Advanced Photocatalysis Techniques
  • Analytical Chemistry and Sensors

University of Tartu
2014-2024

Technische Universität Ilmenau
2011

Slovak University of Technology in Bratislava
2011

Slovak Academy of Sciences
2011

Competence Centre on Health Technologies (Estonia)
2009

Estonian Academy of Sciences
1997

Effective corrosion protection via a thin ceramic coating on an Al-alloy AA2024-T3 is demonstrated. The preparation of the consists two steps. First, with special anodizing process, chemically homogeneous base layer formed substrate. Then, nanoscale pores in are sealed, and entire surface covered resistant Al2O3/TiO2 nanolaminate using atomic deposition. sample thoroughly characterized, including linear sweep voltammetry (LSV) electrochemical impedance spectroscopy (EIS) testing by long-term...

10.1016/j.surfcoat.2021.126993 article EN cc-by-nc-nd Surface and Coatings Technology 2021-02-21

Titanium dioxide coatings of different thicknesses were deposited on the acid-treated multiwall carbon nanotubes (MWCNTs) using controlled atomic layer deposition (ALD). Pt nanoparticles (NP) TiO2/MWCNT supports two methods, viz. sputter-deposition and photo-deposition. Scanning electron microscopy (SEM) scanning transmission (STEM) measurements revealed successful application ALD for TiO2. Both magnetron sputtering photo-deposition found to be efficient well-controlled techniques NPs...

10.1149/2.0071916jes article EN Journal of The Electrochemical Society 2019-01-01

Thin HfO2 films were grown by atomic layer deposition on chemical vapor-deposited large-area graphene. The graphene was transferred, prior to the of overlayer, bottom dielectric pregrown Si/TiN substrate. Either HfCl4 or Hf[N(CH3)(C2H5)]4 used as metal precursor for layer. O2 plasma-assisted process applied growing from also top To improve transfer, effects surface pretreatments as-grown and aged Si/TiN/HfO2 substrates studied compared. retained its integrity after plasma processes. Studies...

10.1021/acsanm.1c00587 article EN cc-by-nc-nd ACS Applied Nano Materials 2021-05-12

Abstract Thin films of SnO 2 have been successfully deposited by atomic layer deposition (ALD) using the SnI 4 /O precursor combination. Depositions were carried out in temperature range 400–750 °C on SiO /Si(100) and single‐crystalline α‐Al O 3 (012) substrates. The found to grow as tetragonal phase (cassiterite), polycrystalline /Si(100), epitaxial substrates with in‐plane orientation relationships [010] ∥ [100] [10 $\bar 1$ ] [ 2$ 1] . In general growth rate was high, changing from 0.10...

10.1002/cvde.200290002 article EN Chemical Vapor Deposition 2003-01-03

The atomic layer deposition of Al2O3 films on Si(100) and α-Cr2O3 was studied. were grown via AlCl3-H2O, AlCl3-O3, Al(CH3)3-H2O, Al(CH3)3-O3 processes at 300–750 °C. deposited from AlCl3 H2O temperatures ≥ 400 °C contained the corundum phase alumina (α-Al2O3). densities refractive indices α-Al2O3 close to corresponding values single-crystal exceeded markedly those amorphous Al2O3. also obtained in 450 O3 Al(CH3)3 H2O. However, crystallinity, densities, latter lower than Etching hot (110 °C)...

10.1021/acs.cgd.1c00471 article EN Crystal Growth & Design 2021-06-14

Complex porous 316 L stainless steel, Ti-6Al-4V, Ti-6Al-7Nb, ULTEM™ 1010 and MED610™ polymer structures were produced with additive manufacturing methods. The surface functionalized by atomic layer deposition of titanium, zinc zirconium oxide coatings a thickness between 14 43 nm. Deep narrow aspect ratios >10 could be coated. Titanium films are mostly amorphous when plasma-assisted is used contain nanocrystalline anatase deposited thermal deposition. titanium grains ranged in size from ∼20...

10.1016/j.surfin.2022.102361 article EN cc-by Surfaces and Interfaces 2022-09-22

In previous decades, investigation of superconductors was aimed either at finding materials with higher critical temperatures or discovering nontypical superconducting behavior. Here, we present the cupric (CuO) thin films, which were synthesized by atomic layer deposition using a metal-organic precursor, copper (II)-bis-(-dimethylamino-2-propoxide), and ozone as an oxidizer. The process optimized employing quartz crystal monitoring, contact between deposited films planar three-dimensional...

10.3390/cryst10080650 article EN cc-by Crystals 2020-07-29

Chromium (III) oxide is a technologically interesting material with attractive chemical, catalytic, magnetic and mechanical properties. It can be produced by different chemical physical methods, for instance, metal-organic vapor deposition, thermal decomposition of chromium nitrate Cr(NO3)3 or ammonium dichromate (NH4)2Cr2O7, magnetron sputtering atomic layer deposition. The latter method was used in the current work to deposit Cr2O3 thin films thicknesses from 28 400 nm at deposition...

10.3390/nano12010082 article EN cc-by Nanomaterials 2021-12-29

HfO2 and Fe2O3 thin films laminated stacks were grown by atomic layer deposition at 350 °C from hafnium tetrachloride, ferrocene, ozone. Nonlinear, saturating, hysteretic magnetization was recorded in the films. Magnetization expectedly dominated increasing content of Fe2O3. However, coercive force could also be enhanced choice appropriate ratios nanolaminated structures. Saturation observed measurement temperature range 5-350 K, decreasing towards higher temperatures with films' thicknesses...

10.3390/nano12152593 article EN cc-by Nanomaterials 2022-07-28

Metal-insulator-metal structures for dynamic random access memory capacitor applications were prepared by atomic layer deposition. Rutile TiO2 dielectric layers grown on top of RuO2 electrodes. doped in different ways aluminum and these compared to undoped ones. C-V J-V measurements show that Al doping reduces the capacitance density stacks while reducing leakage current. Varying initial profile did not change electrical properties stacks. Leakage current analysis revealed samples is...

10.1116/1.3534023 article EN Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena 2011-01-01
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