A5031538929- Particle physics theoretical and experimental studies
- Particle Detector Development and Performance
- High-Energy Particle Collisions Research
- Quantum Chromodynamics and Particle Interactions
- Radiation Detection and Scintillator Technologies
- Dark Matter and Cosmic Phenomena
- Radiation Effects in Electronics
- Computational Physics and Python Applications
- Neutrino Physics Research
- CCD and CMOS Imaging Sensors
- Medical Imaging Techniques and Applications
- Silicon and Solar Cell Technologies
- Cosmology and Gravitation Theories
- Diamond and Carbon-based Materials Research
- Distributed and Parallel Computing Systems
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Semiconductor Detectors and Materials
- Nuclear Physics and Applications
- Particle Accelerators and Free-Electron Lasers
- Black Holes and Theoretical Physics
- Atomic and Subatomic Physics Research
- Advanced X-ray and CT Imaging
- advanced mathematical theories
- Semiconductor materials and devices
- Astrophysics and Cosmic Phenomena
Jožef Stefan Institute
2016-2025
University of Ljubljana
2016-2025
Jožef Stefan International Postgraduate School
2017-2025
Northern Illinois University
2023-2024
European Organization for Nuclear Research
2003-2024
University of Manchester
2024
The Ohio State University
2024
Institute of Science and Technology
2023-2024
A. Alikhanyan National Laboratory
2024
Institute for High Energy Physics
2020-2024
In this paper we report on the timing resolution of first production 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions 180 GeV/c momentum. UFSD are based Low-Gain Avalanche (LGAD) design, employing n-on-p silicon sensors internal charge multiplication due to presence thin, low-resistivity diffusion layer below junction. The used belongs thin (50 μm) sensors, an pad area 1.4 mm2. gain was measured vary between 5 and 70 depending bias voltage....
A Transient Current Technique (TCT) utilizing an IR laser with 100 ps pulse width and beam diameter of FWHM = 8 μm was used to evaluate non-irradiated irradiated p-type silicon micro-strip detectors. The parallel the surface perpendicular strips (Edge-TCT) so that electron hole pairs were created at known depth in detector. Induced current pulses measured one strips. shapes analyzed a new way, which does not require knowledge effective trapping times, determine drift velocity, charge...
Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed context of ATLAS upgrade Phase-II at HL-LHC. The pixel sensors are characterized by a small collection electrode (3 $\mu$m) to minimize capacitance, size ($36.4\times 36.4$ $\mu$m), and produced on high resistivity epitaxial p-type silicon. design targets radiation hardness $1\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$, compatible with outermost layer ITK detector....
Edge-TCT method was used to extract velocity profiles in heavily irradiated silicon micro-strip detectors. Detectors were up 1016 c -2 with reactor neutrons, 200 MeV pions and a combination of both. A simple electric field model assuming two space charge regions at each side the detector neutral bulk in-between found describe profile. It observed that after heavy irradiation sizeable is present entire volume. For pion-irradiated detectors strikingly different obtained attributed large oxygen...
We use fits to recent published CPLEAR data on neutral kaon decays $π^+π^-$ and $πeν$ constrain the CPT--violation parameters appearing in a formulation of system as an open quantum-mechanical system. The obtained upper limits are approaching range suggested by certain ideas concerning quantum gravity.
Beam test results of the radiation tolerance study chemical vapour deposition (CVD) diamond against different particle species and energies is presented. We also present beam on independence signal size incident rate in charged detectors based un-irradiated irradiated poly-crystalline CVD over a range fluxes from 2 kHz/cm2 to 10 MHz/cm2. The pulse height sensors was measured with readout electronics peaking time 6 ns. In addition functionality 3D devices demonstrated tests are shown be...
The production of strip sensors for the ATLAS Inner Tracker (ITk) started in 2021. Since then, a Quality Assurance (QA) program has been carried out continuously, by using specific test structures, parallel to Control (QC) inspection sensors. QA consists monitoring sensor-specific characteristics and technological process variability, before after irradiation with gammas, neutrons, protons. After two years, half full volume reached we present an analysis parameters measured as part process....
Charge collection properties of depleted CMOS pixel detector prototypes produced on p-type substrate 2 kΩ cm initial resistivity (by LFoundry 150 nm process) were studied using Edge-TCT method before and after neutron irradiation. The test structures for investigation technology in tracking detectors experiments at HL-LHC upgrade. Measurements made with passive which current pulses induced charge collecting electrodes could be directly observed. Thickness layer was estimated as function...