N. Cartiglia
A5100705900- Particle physics theoretical and experimental studies
- High-Energy Particle Collisions Research
- Quantum Chromodynamics and Particle Interactions
- Particle Detector Development and Performance
- Dark Matter and Cosmic Phenomena
- Cosmology and Gravitation Theories
- Computational Physics and Python Applications
- Radiation Detection and Scintillator Technologies
- Neutrino Physics Research
- CCD and CMOS Imaging Sensors
- Radiation Effects in Electronics
- Astrophysics and Cosmic Phenomena
- Particle Accelerators and Free-Electron Lasers
- Black Holes and Theoretical Physics
- Medical Imaging Techniques and Applications
- Radiation Therapy and Dosimetry
- Advanced Semiconductor Detectors and Materials
- Atomic and Subatomic Physics Research
- Distributed and Parallel Computing Systems
- Advancements in Semiconductor Devices and Circuit Design
- Silicon and Solar Cell Technologies
- Superconducting Materials and Applications
- Particle accelerators and beam dynamics
- Nuclear reactor physics and engineering
- Gamma-ray bursts and supernovae
Istituto Nazionale di Fisica Nucleare, Sezione di Torino
2016-2025
Università degli Studi del Piemonte Orientale “Amedeo Avogadro”
2016-2025
Institute of High Energy Physics
2015-2024
A. Alikhanyan National Laboratory
2014-2024
Istituto Nazionale di Fisica Nucleare
2007-2024
University of Antwerp
2024
University of Turin
2009-2023
University of Seoul
2022-2023
Center for Research and Advanced Studies of the National Polytechnic Institute
2021
Abdus Salam Centre for Physics
2021
The evolution of particle detectors has always pushed the technological limit in order to provide enabling technologies researchers all fields science. One archetypal example is silicon detectors, from a system with few channels 30 years ago, tens millions independent pixels currently used track charged particles major physics experiments. Nowadays, are ubiquitous not only research laboratories but almost every high-tech apparatus, portable phones hospitals. In this contribution, we present...
In this paper we report on the timing resolution of first production 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions 180 GeV/c momentum. UFSD are based Low-Gain Avalanche (LGAD) design, employing n-on-p silicon sensors internal charge multiplication due to presence thin, low-resistivity diffusion layer below junction. The used belongs thin (50 μm) sensors, an pad area 1.4 mm2. gain was measured vary between 5 and 70 depending bias voltage....
In this paper, we report on the radiation resistance of 50-micron thick LGAD detectors manufactured at Fondazione Bruno Kessler employing several different doping combinations gain layer. with layer Boron, Boron low-diffusion, Gallium, Carbonated and Gallium have been designed successfully produced. These sensors exposed to neutron fluences up $\phi_n \sim 3 \cdot 10^{16}\; n/cm^2$ proton $\phi_p 9\cdot10^{15}\; p/cm^2$ test their resistance. The experimental results show that Gallium-doped...
A small electromagnetic sampling calorimeter, installed in the ZEUS experiment 1995, significantly enhanced acceptance for very low x and Q^2 inelastic neutral current scattering, e^{+}p \to e^{+}X, at HERA. measurement of proton structure function F_2 total virtual photon-proton (\gamma^*p) cross-section is presented 0.11 \le Q^{2} 0.65 GeV^2 2 \times 10^{-6} 6 10^{-5}, corresponding to a range \gamma^{*}p c.m. energy 100 W 230 GeV. Comparisons with various models are also presented.
In this contribution we will review the progresses toward construction of a tracking system able to measure passage charged particles with combined precision ∼10 ps and μm, either using single type sensor, concurrently position time, or combination time sensors.
The photoproduction reaction gamma p -> mu+ mu- has been studied in ep interactions using the ZEUS detector at HERA. data sample corresponds to an integrated luminosity of 43.2 pb^{-1}. Upsilon meson observed for first time. sum products elastic Upsilon(1S), Upsilon(2S), Upsilon(3S) cross sections with their respective branching ratios is determined be 13.3 +- 6.0(stat.)^{+2.7}_{-2.3}(syst.) pb a mean photon-proton centre mass energy 120 GeV. section above prediction perturbative QCD model.
This paper presents measurements of D∗± production in deep inelastic scattering from collisions between 27.5 GeV positrons and 820 protons. The data have been taken with the ZEUS detector at HERA. decay channel D∗+ → (D0 K−π+)π+ (+c.c) has used study. e+p cross section for inclusive 5 < Q2 100 GeV2> y 0.7 is 5.3 ± 1.0 0.8 nb kinematic region 1.3 pT(D∗±) 9.0 |η(D∗±)| 1.5. Differential sections as functions pT(D∗±), η(D∗±), W are compared next-to-leading order QCD calculations based on...
The development of Low-Gain Avalanche Detectors has opened up the possibility manufacturing silicon detectors with signal larger than that traditional sensors. In this paper we explore timing performance Detectors, and in particular demonstrate obtaining ultra-fast detector time resolution less 20 picosecond.
We designed, produced, and tested RSD (Resistive AC-Coupled Silicon Detectors) devices, an evolution of the standard LGAD (Low-Gain Avalanche Diode) technology where a resistive n-type implant coupling dielectric layer have been implemented. The first feature works as sheet, freezing multiplied charges, while second one acts capacitive for readout pads. succeeded in challenging goal obtaining very fine pitch (50, 100, 200 um) maintaining signal waveforms suitable high timing 4D-tracking...
We present a novel design of fine segmented low gain avalanchediodes ('GAD) based on trench-isolation technique. The proposed reduces the width no-gain inter-pad region down to less than 10 μm, from 20-80 μm current 'GAD technology, enabling production sensors with small pixel pitch and high fill-factor. Prototypes this new technologywere produced in FBK laboratories. Their electrical characterization terms I-V, measurement response focused laser, indicates that trenches provide isolation...
Abstract This contribution presents a new version of the FAST (Fast Amplifier for Silicon detector Timing) ASICs, called FAST3, and more significant results from its characterization. The FAST3- Analog is 16-channel front-end electronic designed low power consumption, minimal noise, reduced temporal jitter, wide charge input range (3–40 fC). Developed in standard 110 nm CMOS technology, ASIC optimized to read out LGAD sensors timing tracking applications. was extensively characterized...