A5107369553- Particle physics theoretical and experimental studies
- High-Energy Particle Collisions Research
- Particle Detector Development and Performance
- Quantum Chromodynamics and Particle Interactions
- Dark Matter and Cosmic Phenomena
- Radiation Detection and Scintillator Technologies
- Computational Physics and Python Applications
- Radiation Effects in Electronics
- Cosmology and Gravitation Theories
- Neutrino Physics Research
- CCD and CMOS Imaging Sensors
- Advancements in Semiconductor Devices and Circuit Design
- Atomic and Subatomic Physics Research
- Silicon and Solar Cell Technologies
- Medical Imaging Techniques and Applications
- Distributed and Parallel Computing Systems
- Black Holes and Theoretical Physics
- Diamond and Carbon-based Materials Research
- Nuclear Physics and Applications
- Astrophysics and Cosmic Phenomena
- Semiconductor materials and devices
- Advanced Semiconductor Detectors and Materials
- Particle Accelerators and Free-Electron Lasers
- advanced mathematical theories
- Advanced Data Storage Technologies
University of Ljubljana
2016-2025
Jožef Stefan International Postgraduate School
2017-2025
Jožef Stefan Institute
2016-2025
Fermi National Accelerator Laboratory
2024
University of Chicago
2024
University of Geneva
2003-2024
Istanbul University
2023-2024
European Organization for Nuclear Research
2001-2024
ETH Zurich
1995-2024
A. Alikhanyan National Laboratory
2024
In this paper we report on the timing resolution of first production 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions 180 GeV/c momentum. UFSD are based Low-Gain Avalanche (LGAD) design, employing n-on-p silicon sensors internal charge multiplication due to presence thin, low-resistivity diffusion layer below junction. The used belongs thin (50 μm) sensors, an pad area 1.4 mm2. gain was measured vary between 5 and 70 depending bias voltage....
A Transient Current Technique (TCT) utilizing an IR laser with 100 ps pulse width and beam diameter of FWHM = 8 μm was used to evaluate non-irradiated irradiated p-type silicon micro-strip detectors. The parallel the surface perpendicular strips (Edge-TCT) so that electron hole pairs were created at known depth in detector. Induced current pulses measured one strips. shapes analyzed a new way, which does not require knowledge effective trapping times, determine drift velocity, charge...
Novel silicon detectors with charge gain were designed (Low Gain Avalanche Detectors - LGAD) to be used in particle physics experiments, medical and timing applications. They are based on a n++-p+-p structure where appropriate doping of multiplication layer (p^+) is needed achieve high fields impact ionization. Several wafers processed different junction parameters resulting gains up 16 at voltages. In order study radiation hardness LGAD, which one key requirements for future energy several...
Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed context of ATLAS upgrade Phase-II at HL-LHC. The pixel sensors are characterized by a small collection electrode (3 $\mu$m) to minimize capacitance, size ($36.4\times 36.4$ $\mu$m), and produced on high resistivity epitaxial p-type silicon. design targets radiation hardness $1\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$, compatible with outermost layer ITK detector....
Edge-TCT method was used to extract velocity profiles in heavily irradiated silicon micro-strip detectors. Detectors were up 1016 c -2 with reactor neutrons, 200 MeV pions and a combination of both. A simple electric field model assuming two space charge regions at each side the detector neutral bulk in-between found describe profile. It observed that after heavy irradiation sizeable is present entire volume. For pion-irradiated detectors strikingly different obtained attributed large oxygen...
The upgrade of the ATLAS tracking detector (ITk) for High-Luminosity Large Hadron Collider at CERN requires development novel radiation hard silicon sensor technologies. Latest developments in CMOS processing offer possibility combining high-resistivity substrates with on-chip high-voltage biasing to achieve a large depleted active volume. We have characterised monolithic pixel sensors (DMAPS), which were produced modified imaging process implemented TowerJazz 180 nm framework ALICE...
Artificial intelligence (AI) uses large datasets to "train" algorithms that make autonomous decisions, leading significant changes across fields, including digital marketing and personalized advertising. Given AI's growing importance for business society, ethical concerns, particularly related privacy transparency, are becoming increasingly relevant. This research focuses on the aspects of AI in marketing, specifically examining consumer perceptions responses recommendations advertisements....
Abstract The RD50-MPW prototypes are High Voltage-CMOS (HV-CMOS) pixel chips in the 150 nm technology from LFoundry S.r.l. aimed at developing monolithic silicon sensors with excellent radiation tolerance, fast timing resolution and high granularity for tracking applications future challenging experiments physics. RD50-MPW4, latest prototype within this programme, implements significant improvements a breakdown voltage (> 400 V), therefore an through multi-ring structure around chip edge...
Beam conditions and the potential detector damage resulting from their anomalies have pushed LHC experiments to build own beam monitoring devices. The ATLAS Conditions Monitor (BCM) consists of two stations (forward backward) detectors each with four modules. sensors are required tolerate doses up 500 kGy in excess 1015 charged particles per cm2 over lifetime experiment. Each module includes diamond read out parallel. located symmetrically around interaction point, positioning at z = ±184 cm...
Beam test results of the radiation tolerance study chemical vapour deposition (CVD) diamond against different particle species and energies is presented. We also present beam on independence signal size incident rate in charged detectors based un-irradiated irradiated poly-crystalline CVD over a range fluxes from 2 kHz/cm2 to 10 MHz/cm2. The pulse height sensors was measured with readout electronics peaking time 6 ns. In addition functionality 3D devices demonstrated tests are shown be...
Charge collection properties of particle detectors made in HV-CMOS technology were investigated before and after irradiation with reactor neutrons. Two different sensor types designed processed 180 350 nm by AMS. Edge-TCT charge measurements electrons from 90Sr source employed. Diffusion generated carriers undepleted substrate contributes significantly to the irradiation, while drift contribution prevails as shown at shaping times. The depleted region a given bias voltage was found grow...
The production of strip sensors for the ATLAS Inner Tracker (ITk) started in 2021. Since then, a Quality Assurance (QA) program has been carried out continuously, by using specific test structures, parallel to Control (QC) inspection sensors. QA consists monitoring sensor-specific characteristics and technological process variability, before after irradiation with gammas, neutrons, protons. After two years, half full volume reached we present an analysis parameters measured as part process....