A5105509685- Particle physics theoretical and experimental studies
- Particle Detector Development and Performance
- High-Energy Particle Collisions Research
- Radiation Detection and Scintillator Technologies
- Quantum Chromodynamics and Particle Interactions
- CCD and CMOS Imaging Sensors
- Computational Physics and Python Applications
- Dark Matter and Cosmic Phenomena
- Radiation Effects in Electronics
- Medical Imaging Techniques and Applications
- Cosmology and Gravitation Theories
- Neutrino Physics Research
- Distributed and Parallel Computing Systems
- Advancements in PLL and VCO Technologies
- Electron and X-Ray Spectroscopy Techniques
- Atomic and Subatomic Physics Research
- Advancements in Semiconductor Devices and Circuit Design
- Railway Systems and Energy Efficiency
- Magnetic confinement fusion research
- Advanced MEMS and NEMS Technologies
- Advanced Data Storage Technologies
- Power Line Communications and Noise
- Electromagnetic Compatibility and Measurements
- Maritime Navigation and Safety
- Maritime Transport Emissions and Efficiency
University of California, Santa Cruz
2018-2025
Carleton University
2025
Systems Engineering Society of China
2024
A. Alikhanyan National Laboratory
2024
Heidelberg University
2023
Brookhaven National Laboratory
2023
The University of Adelaide
2022
Peking University
2021
Institut National de Physique Nucléaire et de Physique des Particules
2015-2018
Centre National de la Recherche Scientifique
2015-2018
In this paper, we report on the radiation resistance of 50-micron thick LGAD detectors manufactured at Fondazione Bruno Kessler employing several different doping combinations gain layer. with layer Boron, Boron low-diffusion, Gallium, Carbonated and Gallium have been designed successfully produced. These sensors exposed to neutron fluences up $\phi_n \sim 3 \cdot 10^{16}\; n/cm^2$ proton $\phi_p 9\cdot10^{15}\; p/cm^2$ test their resistance. The experimental results show that Gallium-doped...
Several future high-energy physics facilities are currently being planned. The proposed projects include high energy $e^+ e^-$ circular and linear colliders, hadron colliders muon while the Electron-Ion Collider (EIC) has already been approved for construction at Brookhaven National Laboratory. Each proposal its own advantages disadvantages in term of readiness, cost, schedule reach, each requires design production specific new detectors. This paper first presents performances required to...
Low Gain Avalanche Diodes (LGADs) are thin (20-50 μm ) silicon diode sensors with modest internal gain (typically 5 to 50) and exceptional time resolution (17 ps 50 ). However, the granularity of such devices is limited millimeter scale due need include protection structures at boundaries readout pads avoid premature breakdown large local electric fields. Here, we present a new approach – Deep-Junction LGAD (DJ-LGAD) that decouples high-field region from plane. This expected improve...
In this paper we report results from a neutron irradiation campaign of Ultra-Fast Silicon Detectors (UFSD) with fluences 1e14, 3e14, 6e14, 1e15, 3e15, 6e15 n/cm2. The UFSD used in study are circular 50 micro-meter thick Low-Gain Avalanche (LGAD), 1.0 mm diameter active area. They have been produced by Hamamatsu Photonics (HPK), Japan, pre-radiation internal gain the range 10-100 depending on bias voltage. sensors were tested pre-irradiation and post-irradiation minimum ionizing particle...
The properties of 50 um thick Low Gain Avalanche Diode (LGAD) detectors manufactured by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before after irradiation with 1 MeV neutrons. Their performance measured in charge collection studies using b-particles from a 90Sr source capacitance-voltage scans (C-V) to determine the bias deplete gain layer. Carbon infusion layer sensors was FBK UFSD3 production. HPK instead produced LGADs very thin, highly doped deep...
Abstract Low Gain Avalanche Diodes (LGADs) represent the state-of-the-art in timing measurements and will instrument future Timing Detectors of ATLAS CMS for High-Luminosity LHC. While initially conceived as a sensor charged particles, intrinsic gain LGADs makes it possible to detect low-energy X-rays with good energy resolution excellent time (tens picoseconds). Using Stanford Synchrotron Radiation Lightsource (SSRL) at SLAC, several designs were characterized energies from 5 70 keV. The...
Abstract We present the first results from HPSoC ASIC designed for readout of Ultra-fast Silicon Detectors. The 4-channel manufactured in 65 nm CMOS by TSMC has been optimized 50 μm thick AC-LGAD. evaluation analog front end with β-particles impinging on 3 × AC-LGAD arrays (500 pitch, 200 2 metal) confirms a fast output rise time 600 ps and good timing performance jitter 45 ps. Further calibration experiments TCT laser studies indicate some gain limitations that are being investigated...
Ultra-Fast Silicon Detectors (UFSDs) are n-in-p silicon detectors that implement moderate gain (typically 5 to 25) using a thin highly doped p++ layer between the high resistivity p-bulk and junction of sensor. The presence allows excellent time measurement for impinging minimum ionizing charged particles. An important design consideration is sensor thickness, which has strong impact on achievable resolution. We present result measurements LGADs thickness 20 micro-m 50 micro-m. data fit...
We investigate the signal propagation in AC-LGAD (aka RSD), which are LGAD with a common N+ layer and segmented AC-coupled readout contacts, by measuring response to IR laser TCT on large selection of strip readout. The interest for this topic derives from realization that while charge sharing between neighboring strips is essential good position resolution, beyond next neighbor generates background signals general detrimental sensor goal low occupancy. Using produced Hamamatsu Photonics...
Next generation Low Gain Avalanche Diodes (LGAD) produced by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before after irradiation with ~1MeV neutrons at the JSI facility in Ljubljana. Sensors irradiated to a maximum 1-MeV equivalent fluence of 2.5E15 N eq /cm 2 . The sensors analysed this paper are an improvement lessons learned from previous FBK HPK productions that already reported precedent papers. gain layer was fine-tuned optimize performance irradiation....
Low Gain Avalanche Detectors (LGADs) are thin silicon detectors with moderate internal signal amplification and time resolution as good 17 ps for minimum ionizing particles. However the current major limiting factor in granularity is due to protection structures preventing breakdown caused by high electric fields at edge of segmented implants. This structure, called Junction Termination Extension (JTE), causes a region 50-100 μm inactive space. Therefore, LGAD sensors currently limited mm...
Low-Gain Avalanche Diodes (LGADs) are silicon sensors developed for the fast detection of minimum ionizing particles (mips). Characterized by an internal moderate gain that enhances signal amplitude and built on thin substrates a few tens microns, they exhibit excellent timing performance. However, to achieve spatially uniform multiplication large pixel pitch is needed, preventing fine spatial resolution. To overcome this limitation create 4D detector which can simultaneously provide good...
PIONEER is a next-generation experiment to measure the charged-pion branching ratio electrons vs. muons and pion beta decay with an order of magnitude improvement in precision. This will probe lepton universality at unprecedented level test CKM unitarity quantum loop level. was approved 2022 run PiE5 beamline PSI. A high-granularity active target (ATAR) being designed provide detailed 4D tracking information, allowing separation energy deposits products both position time. The chosen...
Low Gain Avalanche Detectors (LGADs) are thin silicon detectors with moderate internal signal amplification and time resolution as good 17 ps for minimum ionizing particles. However, the current major limiting factor in granularity is due to protection structures preventing breakdown caused by high electric fields at edge of segmented implants. This structure, called Junction Termination Extension (JTE), causes a region 50-100~\um\ inactive space. Therefore, LGAD sensors currently limited mm...