A5034240716- Particle Detector Development and Performance
- Radiation Detection and Scintillator Technologies
- CCD and CMOS Imaging Sensors
- Particle physics theoretical and experimental studies
- High-Energy Particle Collisions Research
- Radiation Effects in Electronics
- Quantum Chromodynamics and Particle Interactions
- Medical Imaging Techniques and Applications
- Advanced X-ray and CT Imaging
- Radiation Therapy and Dosimetry
- Dark Matter and Cosmic Phenomena
- Advanced Optical Sensing Technologies
- Electron and X-Ray Spectroscopy Techniques
- Advanced MEMS and NEMS Technologies
- Photonic and Optical Devices
- Atomic and Subatomic Physics Research
- Advancements in Semiconductor Devices and Circuit Design
- 3D IC and TSV technologies
- Advancements in PLL and VCO Technologies
- Semiconductor Lasers and Optical Devices
- Particle Accelerators and Free-Electron Lasers
- Advanced Fiber Optic Sensors
- Advanced Semiconductor Detectors and Materials
- Sensor Technology and Measurement Systems
- Cosmology and Gravitation Theories
Fondazione Bruno Kessler
2020-2024
European Organization for Nuclear Research
2017-2024
Conpart (Norway)
2024
Laboratoire de Physique Nucléaire et de Hautes Énergies
2024
Ferioli & Gianotti (Italy)
2024
European Science Foundation
2024
Istituto Nazionale di Fisica Nucleare, Trento Institute for Fundamental Physics And Applications
2022-2024
University of Geneva
2024
Universität Hamburg
2014-2021
Monitoring Ultra-High Dose Rate (UHDR) beams is one of the multiple challenges posed by emergent FLASH radiotherapy. Technologies (i.e., gas-filled ionization chambers) nowadays used in conventional radiotherapy are no longer effective when applied to UHDR regimes, due recombination effect they affected by, and time required collect charges. Exploiting expertise field silicon sensors’ applications into clinics, medical physics group University INFN Torino investigating thin sensors as...
In recent years, the gain suppression mechanism has been studied for large localized charge deposits in Low-Gain Avalanche Detectors (LGADs). LGADs are a thin silicon detector with highly doped layer that provides moderate internal signal amplification. Using CENPA Tandem accelerator at University of Washington, response different thicknesses to MeV-range energy from proton beam were studied. Three LGAD prototypes 50~$\mu$m, 100~$\mu$m, 150~$\mu$m characterized. The devices' was determined...
We show the developments carried out to improve silicon sensor technology for detection of soft X-rays with hybrid X-ray detectors. An optimization entrance window is required quantum efficiency. The LGAD can be used amplify signal generated by and increase signal-to-noise ratio, making single photon resolution in energy range possible. In this paper, we report first results obtained from an production optimized thin window. Single down 452~eV has been demonstrated measurements, a ratio...
Abstract This paper presents the measurements on first very thin Ultra-Fast Silicon Detectors (UFSDs) produced by Fondazione Bruno Kessler; data have been collected in a beam test setup at CERN PS, using with momentum of 12 GeV/c. UFSDs nominal thickness 25 and 35 $$\mu$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mi>μ</mml:mi> </mml:math> m an area 1 $$\times$$ <mml:mo>×</mml:mo> $$\text {mm}^2$$ <mml:msup> <mml:mtext>mm</mml:mtext> <mml:mn>2</mml:mn> </mml:msup>...
Hybrid pixel detectors have become indispensable at synchrotron and X-ray free-electron laser facilities thanks to their large dynamic range, high frame rate, low noise, area. However, energies below 3 keV, the detector performance is often limited because of poor quantum efficiency sensor difficulty in achieving single-photon resolution due signal-to-noise ratio. In this paper, we address silicon sensors by refining design entrance window, mainly passivating surface optimizing dopant...
A new development of radiation-resistant silicon sensors is presented. The exploit the Low-Gain Avalanche Diode (LGAD) technology, with internal multiplication charge carriers, in combination thin substrates, intrinsically less affected by radiation. An innovative design gain implant typical LGADs has been developed and fabricated, employing compensation acceptor donor dopants to reproduce effective doping dose standard LGAD sensors. At end 2022, Fondazione Bruno Kessler (Italy) delivered...
Abstract Single-photon detection of X-rays in the energy range 250 eV to 1 keV is difficult for hybrid detectors because low quantum efficiency and signal-to-noise ratio. The caused by absorption soft entrance window silicon sensors. consists an insensitive layer on surface a highly doped layer, which typically from few hundred nanometers couple micrometers thick comparable depth X-ray photons (e.g. attenuation length ∼100 nm silicon). ratio mainly small signal amplitude ca. 70 electrons...
Pixelated low-gain avalanche diodes (LGADs) can provide both precision spatial and temporal measurements for charged particle detection; however, electrical termination between the pixels yields a no-gain region, such that active area or fill factor is not sufficient small pixel sizes. Trench-isolated LGADs (TI-LGADs) are strong candidate solving fill-factor problem, as p-stop structure replaced by isolated trenches etched in silicon itself. In TI-LGAD process, structure, typical of LGADs,...
Due to their high frame rates and dynamic range, large area coverage, signal-to-noise ratio, hybrid silicon pixel detectors are an established standard for photon science applications at X-ray energies between 2 keV 20 keV. These properties also make interesting experiments with soft X-rays 200 eV In this energy however, limited by the quantum efficiency of sensor noise readout electronics. limitations can be overcome utilizing inverse Low-Gain Avalanche Diode (iLGAD) sensors optimized...
In the past few years, need of measuring accurately spatial and temporal coordinates particles generated in high-energy physics experiments has spurred a strong R\&D field silicon sensors. Within these research activities, so-called Ultra-Fast Silicon Detectors (UFSDs), sensors optimized for timing based on Low-Gain Avalanche Diode (LGAD) design, have been proposed adopted by CMS ATLAS collaborations their respective layers. The defining feature (UFSDs) is internal multiplication...
The basic principle of operation silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the signals seen on electrodes surrounding impact point, achieve excellent space and time resolutions even very large pixels. In this paper, a TCT system using 1064 nm picosecond laser used to characterize RSD produced by Fondazione Bruno Kessler. paper first introduces parametrization errors in determination position...
Abstract At the visible light diagnostic (VLD) port at Karlsruhe Research Accelerator (KARA), it is possible to study energy spread of electron bunches by measuring horizontal bunch profile incoherent synchrotron radiation. KALYPSO, an MHz-rate line-array detector, has been employed measure profile. Recently, KALYPSO system upgraded a version microstrip sensor based on TI-LGAD. The measurements have shown that system’s overall sensitivity was significant - least factor 20 improved, enabling...
In microdosimetry, lineal energies y are calculated from energy depositions ϵ inside the microdosimeter divided by mean chord length , whose value is based on geometrical assumptions both detector and radiation field. This work presents an innovative two-stages hybrid (HDM: for microdosimetry) composed a tissue equivalent proportional counter silicon tracker made of 4 low gain avalanche diode. design provides direct measurement deposition in as well particles tracking with submillimeter...
Abstract In this work, the results of Technology-CAD (TCAD) device-level simulations non-irradiated and irradiated Low-Gain Avalanche Diode (LGAD) detectors their validation against experimental data will be presented. Thanks to intrinsic multiplication charge within these silicon sensors, it is possible improve signal noise ratio thus limiting its drastic reduction with fluence, as happens instead for standard detectors. Therefore, special attention has been devoted choice avalanche model,...
Abstract Experiments at synchrotron radiation sources and X-ray Free-Electron Lasers in the soft energy range (250 eV–2 keV) stand to benefit from adaptation of hybrid silicon detector technology for low photons. Inverse Low Gain Avalanche Diode (iLGAD) sensors provide an internal gain, enhancing signal-to-noise ratio allowing single photon detection below 1 keV using detectors. In addition, optimization entrance window these enhances their quantum efficiency (QE). this work, QE gain a batch...
Abstract In this contribution we describe the second run of RSD (Resistive AC-Coupled Silicon Detectors) designed at INFN Torino and produced by Fondazione Bruno Kessler (FBK), Trento. are n -in- p detectors intended for 4D particle tracking based on LGAD technology that get rid any segmentation implant in order to achieve 100% fill-factor. They characterized three key-elements, (i) a continuous gain implant, (ii) resistive -cathode (iii) dielectric coupling layer deposited top, guaranteeing...
Abstract The next generation of high-energy physics experiments at future hadronic colliders will require tracking detectors able to efficiently operate in extreme radiation environments, where expected fluences exceed 1 × 10 17 n eq /cm 2 . This new operating scenario imposes many efforts on the design effective and radiation-resistant particle detectors. Low-Gain Avalanche Diode (LGAD) represents a remarkable advance because damage effects can be mitigated by exploiting its charge...
Low gain avalanche detectors (LGADs), silicon sensors with intrinsic charge amplification, are being considered as a possible technology for tracking and timing in the high luminosity upgrade of CERN Large Hadron Collider. In order to work such an environment, LGADs must be sufficiently radiation hard. The characterisation before after irradiation properties, gain, collection, spatial homogeneity, space charge, leakage current, is vital assessing performance viability LGADs. This paper...