A5105686466- Particle Detector Development and Performance
- Radiation Detection and Scintillator Technologies
- CCD and CMOS Imaging Sensors
- Radiation Effects in Electronics
- Silicon and Solar Cell Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Thin-Film Transistor Technologies
- Medical Imaging Techniques and Applications
- Particle physics theoretical and experimental studies
- Nuclear Physics and Applications
- Silicon Nanostructures and Photoluminescence
- Advanced Optical Sensing Technologies
- Advanced Semiconductor Detectors and Materials
- Carbon Nanotubes in Composites
- Advanced MEMS and NEMS Technologies
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Nanowire Synthesis and Applications
- Advanced X-ray and CT Imaging
- Magnetic Field Sensors Techniques
- Photonic and Optical Devices
- Radiation Therapy and Dosimetry
- Integrated Circuits and Semiconductor Failure Analysis
- Particle Accelerators and Free-Electron Lasers
- Sensor Technology and Measurement Systems
Istituto Nazionale di Fisica Nucleare, Trento Institute for Fundamental Physics And Applications
2015-2024
Fondazione Bruno Kessler
2015-2024
Ferioli & Gianotti (Italy)
2024
Istituto Nazionale di Fisica Nucleare
2018-2022
Università degli Studi del Piemonte Orientale “Amedeo Avogadro”
2017-2022
Istituto Nazionale di Fisica Nucleare, Sezione di Pisa
2017-2019
University of Pisa
2017-2019
University of Trento
2003-2017
Istituto Nazionale di Fisica Nucleare, Sezione di Genova
2017
Istituto Nazionale di Fisica Nucleare, Sezione di Firenze
2017
Silicon carbide (SiC) is a compound semiconductor, which considered as possible alternative to silicon for particles and photons detection. Its characteristics make it very promising the next generation of nuclear particle physics experiments at high beam luminosity. Carbide detectors Intense Luminosity Investigations Applications (SiCILIA) project starting collaboration between Italian National Institute Nuclear Physics (INFN) IMM-CNR, aiming realization innovative detection systems based...
The ATLAS collaboration will upgrade its semiconductor pixel tracking detector with a new Insertable B-layer (IBL) between the existing and vacuum pipe of Large Hadron Collider. extreme operating conditions at this location have necessitated development radiation hard sensor technologies front-end readout chip, called FE-I4. Planar sensors 3D been investigated to equip layer, prototype modules using FE-I4A fabricated characterized 120 GeV pions CERN SPS 4 positrons DESY, before after module...
In this paper, we report on the radiation resistance of 50-micron thick LGAD detectors manufactured at Fondazione Bruno Kessler employing several different doping combinations gain layer. with layer Boron, Boron low-diffusion, Gallium, Carbonated and Gallium have been designed successfully produced. These sensors exposed to neutron fluences up $\phi_n \sim 3 \cdot 10^{16}\; n/cm^2$ proton $\phi_p 9\cdot10^{15}\; p/cm^2$ test their resistance. The experimental results show that Gallium-doped...
<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> This paper reports on the electrical characterization of first prototypes Geiger-Mode Avalanche Photodiodes (GM-APDs) and Silicon Photomultipliers (SiPMs) produced at ITC-irst, Trento. Both static functional measurements have been performed in dark condition. The tests, consisting reverse forward IV measurements, 20 GM-APDs 90 SiPMs. breakdown voltage, quenching resistance value current level...
In this contribution we will review the progresses toward construction of a tracking system able to measure passage charged particles with combined precision ∼10 ps and μm, either using single type sensor, concurrently position time, or combination time sensors.
We report on the main design and technological characteristics related to latest 3D sensor process developments at Fondazione Bruno Kessler (FBK, Trento, Italy). With respect previous version of this technology, which involved columnar electrodes both doping types etched from wafer sides stopping a short distance opposite surface, passing-through columns are now available. This feature ensures better performance, but also higher reproducibility, is concern in medium volume productions. In...
We designed, produced, and tested RSD (Resistive AC-Coupled Silicon Detectors) devices, an evolution of the standard LGAD (Low-Gain Avalanche Diode) technology where a resistive n-type implant coupling dielectric layer have been implemented. The first feature works as sheet, freezing multiplied charges, while second one acts capacitive for readout pads. succeeded in challenging goal obtaining very fine pitch (50, 100, 200 um) maintaining signal waveforms suitable high timing 4D-tracking...
We present a novel design of fine segmented low gain avalanchediodes ('GAD) based on trench-isolation technique. The proposed reduces the width no-gain inter-pad region down to less than 10 μm, from 20-80 μm current 'GAD technology, enabling production sensors with small pixel pitch and high fill-factor. Prototypes this new technologywere produced in FBK laboratories. Their electrical characterization terms I-V, measurement response focused laser, indicates that trenches provide isolation...
In the last years, high-resolution time tagging has emerged as tool to tackle problem of high-track density in detectors next generation experiments at particle colliders. Time resolutions below 50ps and event average repetition rates tens MHz on sensor pixels having a pitch 50$\mu$m are typical minimum requirements. This poses an important scientific technological challenge development sensors processing electronics. The TIMESPOT initiative (which stands for TIME SPace real-time Operating...
Abstract Designed for accelerator beam diagnostics and photon science applications, KALYPSO is a line array camera that stands out its high-speed performance with the ability to operate at rates up 12 Mfps in continuous readout mode while maintaining full occupancy. In this contribution, system sensor based on TI-LGAD presented. The latest version of employed as diagnostic imaging measure radiation profiles particle KIT accelerator, KARA. system's key features will be presented, including...
In recent years, the gain suppression mechanism has been studied for large localized charge deposits in Low-Gain Avalanche Detectors (LGADs). LGADs are a thin silicon detector with highly doped layer that provides moderate internal signal amplification. Using CENPA Tandem accelerator at University of Washington, response different thicknesses to MeV-range energy from proton beam were studied. Three LGAD prototypes 50~$\mu$m, 100~$\mu$m, 150~$\mu$m characterized. The devices' was determined...
We report on the latest results from development of 3-D silicon radiation detectors at Fondazione Bruno Kessler Trento (FBK), Italy (formerly ITC-IRST). Building obtained previous devices (3-D Single-Type-Column), a new detector concept has been defined, namely 3-D-DDTC (Double-sided Double-Type Column), which involves columnar electrodes both doping types, etched alternate wafer sides, stopping short distance (d) opposite surface. Simulations prove that, if d is kept small with respect to...
Minimization of the insensitive edge area is one key requirements for silicon radiation detectors to be used in future trackers. In 3D this goal can achieved with active edge, at expense a high fabrication process complexity. framework ATLAS sensor collaboration, we produced modified sensors double-sided technology. While approach not suitable obtain edges, because it does use support wafer, allows new type termination, slim edge. paper report on development from numerical simulations design...
Two technological options to achieve a high deposition rate, low stress plasma-enhanced chemical vapor (PECVD) silicon nitride be used in capacitive micromachined ultrasonic transducers (CMUT) fabrication are investigated and presented. Both developed implemented on standard production line PECVD equipment the framework of CMUT technology transfer from R & D production. A tradeoff between residual electrical properties is showed.