A5032240877- Particle physics theoretical and experimental studies
- High-Energy Particle Collisions Research
- Particle Detector Development and Performance
- Quantum Chromodynamics and Particle Interactions
- Dark Matter and Cosmic Phenomena
- Computational Physics and Python Applications
- Neutrino Physics Research
- Cosmology and Gravitation Theories
- Radiation Detection and Scintillator Technologies
- CCD and CMOS Imaging Sensors
- Medical Imaging Techniques and Applications
- Distributed and Parallel Computing Systems
- Atomic and Subatomic Physics Research
- Astrophysics and Cosmic Phenomena
- Radiation Effects in Electronics
- Black Holes and Theoretical Physics
- Particle Accelerators and Free-Electron Lasers
- Advancements in Semiconductor Devices and Circuit Design
- Big Data Technologies and Applications
- Advanced Data Storage Technologies
- Structural Analysis of Composite Materials
- Digital Radiography and Breast Imaging
- Parallel Computing and Optimization Techniques
- Engineering and Materials Science Studies
- IoT and GPS-based Vehicle Safety Systems
University of Oxford
2024-2025
University of Trento
2015-2024
University of Geneva
2017-2024
Istituto Nazionale di Fisica Nucleare, Trento Institute for Fundamental Physics And Applications
2015-2024
A. Alikhanyan National Laboratory
2024
The University of Adelaide
2017-2023
Istituto Nazionale di Fisica Nucleare
2023
University of Manchester
2023
University of Liverpool
2023
University of California, Santa Cruz
2023
The continuously increasing external quantum efficiencies of Perovskite light-emitting diodes (LEDs) have received significant interest in the scientific community. need for monitoring and medical diagnostics has experienced a steady growth recent years, primarily caused by older people an number heart attacks, tumors, cancer disorders among patients. application near-infrared diode (PeNIRLEDs) exhibited considerable efficacy bioimaging, particularly visualization examination blood arteries,...
Owing to their intrinsic (geometry dependent) radiation hardness, 3D pixel sensors are promising candidates for the innermost tracking layers of forthcoming experiment upgrades at Phase 2 High-Luminosity LHC (HL-LHC). To this purpose, extreme hardness up expected maximum fluence 2e16 neq.cm-2 must come along with several technological improvements in a new generation pixels, i.e., increased granularity (50x50 or 25x100 um2 cell size), thinner active region (~100 um), narrower columnar...
To be ready for the challenging conditions of High Luminosity phase LHC accelerator at CERN, ATLAS Inner Detector will completely replaced with a new all-silicon Tracker, ITk. Sensors in innermost layer exposed to fluence up 1.9$\cdot$10$^{16}$~n$_{eq}$/cm$^2$ (considering safety factor 1.5) half HL-LHC program, after which it is scheduled together full system. Pixel sensors 3D technology have been chosen instrument due their radiation hardness. 25x100~$\mu$m$^2$ pixel pitch used central...
High Voltage Monolithic Active Pixel Sensors (HV-MAPS) are based on a commercial CMOS process and collect charge by drift inside reversely biased diode. HV-MAPS represent promising technology for future pixel tracking detectors. Two recent developments presented. The MuPix has continuous readout is being developed the Mu3e experiment whereas ATLASPix LHC applications with triggered readout. Both variants have fully monolithic design including state machines, clock circuitries serial drivers....
Monolithic active pixel sensors (MAPS) based on commercial high-voltage CMOS processes are an exciting technology that is considered as option for the ATLAS Inner Tracker upgrade. Particles detected using deep n-wells a p-type substrate sensor diodes with depleted region extending into silicon bulk. With readout electronics and integrated same device, detector complexity material budget greatly reduced. The ATLASPix1 prototype large-scale MAPS implements full chain single physical chip. It...
We report on an experimental study aimed at gaining deeper insight into the leakage current and breakdown voltage of irradiated double-sided 3D silicon sensors from FBK, so as to improve both design fabrication technology for use future hadron colliders such High Luminosity LHC. Several diode samples different technologies layout are considered, well several irradiations with particle types. While follows expected linear trend radiation fluence, is found depend bulk damage surface damage,...
Following 3D pixel sensor production for the ATLAS Insertable B-Layer, Fondazione Bruno Kessler (FBK) fabrication facility has recently been upgraded to process 6-inch wafers. In 2014, a test batch was fabricated check possible issues relevant this upgrade. While maintaining double-sided technology, some modifications have investigated. We report here on technology and design of batch, present selected results from electrical characterization sensors structures. Notably, breakdown voltage is...
Temperature dependence of intersubband transitions in AlN/GaN multiple quantum wells grown with molecular beam epitaxy is investigated both by absorption studies at different temperatures and modeling conduction-band electrons. For the study, sample heated increments up to $400^\circ$C. The self-consistent Schr\"odinger-Poisson includes temperature effects band-gap influence thermal expansion on piezoelectric field. We find that energy decreases only $\sim 6$ meV $400^\circ$C relative its room value.
A monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP. This proof-of-concept chip contains hexagonal pixels 65 μm and side. The front-end electronics implemented provides an equivalent noise charge 90 160 e− a pixel capacitance 70 220 fF, respectively, total walk less than 1 ns. Lab measurements with 90Sr source show order 50 ps. result is competitive technologies that integrate avalanche gain mechanism.
High Voltage Monolithic Active Pixel Sensors (HV-MAPS) are based on a commercial CMOS process and collect charge by drift inside reversely biased diode. HV-MAPS represent promising technology for future pixel tracking detectors. Two recent developments presented. The MuPix has continuous readout is being developed the Mu3e experiment whereas ATLASPix LHC applications with triggered readout. Both variants have fully monolithic design including state machines, clock circuitries serial drivers....
3D sensors are a promising option for the innermost pixel layers at High Luminosity LHC. However, required very high hit-rate capabilities, increased granularity, extreme radiation hardness, and reduced material budget call device downscale as compared to existing sensors, involving smaller pitch (e.g., 50×50 or 25×100 μm2), shorter inter-electrode spacing (~30 μm), narrower electrodes (~5 active thickness (~100 μm). The development of new generation with these challenging features is under...
This paper reports on the characterisation with Transient Current Technique measurements of charge collection and depletion depth a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before after proton irradiation two different sources: 24 GeV Proton Synchrotron CERN 16.7 MeV Cyclotron Bern Inselspital.
We report on the development of new 3D pixel sensors for Phase 2 Upgrades at High-Luminosity LHC (HL-LHC). To cope with requirements increased granularity (e.g., 50×50 or 25×100 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> size) and extreme radiation hardness (up to a fluence 2×10 xmlns:xlink="http://www.w3.org/1999/xlink">16</sup> n <inf xmlns:xlink="http://www.w3.org/1999/xlink">eq</inf> cm...
In the context of studies ATLAS High Luminosity LHC programme, radiation tolerant pixel detectors in CMOS technologies are investigated. To evaluate effects substrate resistivity on sensor performance, H35DEMO demonstrator, containing different diode and amplifier designs, was produced ams H35 HV-CMOS technology using four resistivities spanning from 80-1000 ohm cm-1. A glueing process a high-precision flip-chip machine developed order to capacitively couple sensors FE-I4 Readout ASIC thin...
Optical transmission is getting more popular in the access network due to increasing demand for bandwidth. New services like IP television (IPTV) transmission, video on (VoD) etc. over Internet together along high speed are confronting of higher bandwidth at customer end today’s Ethernet backbone. Even though well deployed XDSL (i.e., VDSL/VDSL2+, SHDSL) solutions can satisfy but limited restriction regarding distance. Hereby, suitable solution with a long reach be met by reaching optical...
In view of applications in the tracking detectors at High Luminosity LHC (HL-LHC), we have developed a new generation 3D pixel sensors featuring small-pitch (50 × 50 or 25 100 μ m2) and thin active layer (∼ m). Owing to very short inter-electrode distance 30 m), charge trapping effects can be strongly mitigated, making these extremely radiation hard. However, downscaled sensor structure also lends itself high electric fields as bias voltage is increased, motivating investigation leakage...
SiGe BiCMOS technology can be used to produce ultra-fast, low-power silicon pixel sensors that provide state-of-the-art time resolution even without internal gain. The development of such requires the identification and control main factors may degrade timing performance as well characterisation dependance sensor on amplifier power consumption. Measurements with a 90 Sr source prototype produced in SG13G2 from IHP Microelectronics shows 140 ps at an current 7 μA 45 consumption 150 μA....
Abstract ITk detector, the new ATLAS tracking system at High Luminosity LHC, will be equipped with 3D pixel sensor modules in innermost layer (L0). The cell dimensions either 25 × 100 μm 2 (barrel) or 50 (endcap), one read-out electrode centre of a and four bias electrodes corners. Sensors from pre-production wafers (50 ) produced by FBK have been bump bonded to ITkPixV1.1 chips IZM. Bare assembled Genoa on Single Chip Cards characterized laboratory beam.
ATLASpix3 is a 2×2 cm$^2$ high voltage CMOS sensor chip designed to meet the specifications of outer layers ATLAS inner tracker. It compatible with hybrid pixel ASIC RD53A in terms electronic interface and geometry. depleted monolithic detector which allows construction quad modules same size as that sensors. The readout scheme can be externally configured triggered or triggerless column drain readout. hit information transmitted through 1.28 Gbit/s serial link. based on single command input...
The aim of this work is to present the main technological developments carried out at FBK for micro machined radiation sensors used in High Energy Physics (HEP) experiments. We report on issues integrate silicon etching (wet and dry) techniques fabrication flow detector we show some examples innovative detectors realized by means these technologies