A5017411147- Particle Detector Development and Performance
- Radiation Detection and Scintillator Technologies
- CCD and CMOS Imaging Sensors
- Radiation Effects in Electronics
- Radiation Therapy and Dosimetry
- Muon and positron interactions and applications
- Advancements in Semiconductor Devices and Circuit Design
- Magnetic Field Sensors Techniques
- Electrical and Bioimpedance Tomography
- Particle physics theoretical and experimental studies
Karlsruhe Institute of Technology
2015-2024
Heidelberg University
2015-2023
University Hospital Heidelberg
2023
University of Geneva
2021
University of Oxford
2016
The Mu3e experiment aims to find or exclude the lepton flavour violating decay $\mu \rightarrow eee$ at branching fractions above $10^{-16}$. A first phase of using an existing beamline Paul Scherrer Institute (PSI) is designed reach a single event sensitivity $2\cdot 10^{-15}$. We present overview all aspects technical design and expected performance phase~I detector. high rate up $10^{8}$ muon decays per second low momenta electrons positrons pose unique set challenges, which we tackle...
The high-voltage CMOS (HVCMOS) sensors are a novel type of active pixel for ionizing particles that can be implemented in processes with deep n-well option. contains one sensor electrode formed implanted p-type substrate. electronics, embedded shallow wells, placed inside the n-well. By biasing substrate high negative voltage and by use lowly doped substrate, depleted region depth at least 30 μm achieved. electrons generated particle collected drift, which induces fast detectable signals....
Charge collection properties of particle detectors made in HV-CMOS technology were investigated before and after irradiation with reactor neutrons. Two different sensor types designed processed 180 350 nm by AMS. Edge-TCT charge measurements electrons from 90Sr source employed. Diffusion generated carriers undepleted substrate contributes significantly to the irradiation, while drift contribution prevails as shown at shaping times. The depleted region a given bias voltage was found grow...
High voltage CMOS (HVCMOS) sensors are presently considered for the use in Mu3e experiment, ATLAS and CLIC. These can be implemented commercial HVCMOS processes. feature fast charge collection by drift high radiation tolerance. The sensor element is an n-well/p-type diode. This proceeding-paper gives overview of projects recent results.
High Voltage Monolithic Active Pixel Sensors (HV-MAPS) are based on a commercial CMOS process and collect charge by drift inside reversely biased diode. HV-MAPS represent promising technology for future pixel tracking detectors. Two recent developments presented. The MuPix has continuous readout is being developed the Mu3e experiment whereas ATLASPix LHC applications with triggered readout. Both variants have fully monolithic design including state machines, clock circuitries serial drivers....
Monolithic active pixel sensors (MAPS) based on commercial high-voltage CMOS processes are an exciting technology that is considered as option for the ATLAS Inner Tracker upgrade. Particles detected using deep n-wells a p-type substrate sensor diodes with depleted region extending into silicon bulk. With readout electronics and integrated same device, detector complexity material budget greatly reduced. The ATLASPix1 prototype large-scale MAPS implements full chain single physical chip. It...
This article presents the monolithic active high-voltage CMOS (HV-CMOS) pixel sensor HitPix with counting electronics and frame-based readout. It has been developed for high rate ion-beam monitoring, as used, e.g., in medical facilities radiation therapy. The elements are lowly doped n-well p-substrate diodes. Pixel is implemented within cathode (n-well). substrate can be biased to −120 V. In this way, a large depletion zone induced tolerance improved. We could show overall functionality of...
Particle therapy is a well established clinical treatment of tumors. More than one hundred particle centers are in operation world-wide. The advantage using hadrons like protons or carbon ions as particles for tumor irradiation the distinct peak depth-dependent energy deposition, which can be exploited to accurately deposit doses cells. To guarantee this, high accuracy monitoring and control beam utmost importance. Before enters patient, it traverses system has give fast feedback on position...
Abstract Nowadays, cancer treatment with ion beam is well established and studied. This method allows to deposit the maximum dose tumor minimize damage healthy tissue, due Bragg peak of energy deposition near end particle range. During treatment, it possible provide volumetric delivery by changing (penetration depth) adjusting position via a magnetic system. For monitoring system, precise measurement direction, shape fluence in real time becomes crucial effective safe tumor. Additionally,...
High Voltage Monolithic Active Pixel Sensors (HV-MAPS) are based on a commercial CMOS process and collect charge by drift inside reversely biased diode. HV-MAPS represent promising technology for future pixel tracking detectors. Two recent developments presented. The MuPix has continuous readout is being developed the Mu3e experiment whereas ATLASPix LHC applications with triggered readout. Both variants have fully monolithic design including state machines, clock circuitries serial drivers....
The Mu3e experiment is searching for the charged lepton flavour violating decay\break μ+→ e+ e− e+, aiming an ultimate sensitivity of one in 1016 decays. In environment up to 109 muon decays per second detector needs provide precise vertex, time and momentum information suppress accidental physics background. consists cylindrical layers 50 μm thin High Voltage Monolithic Active Pixel Sensors (HV-MAPS) placed a 1 T magnetic field. measurement trajectories decay particles allows vertex...
This paper describes several monolithic pixel detector designs implemented in a high-voltage CMOS technology. The total size of all chips is 1cm × 1cm. matrices are distinguished by the readout cell type, type and address multiplexing. Design details first measurement results described.
This paper describes the status of developments made by ATLAS HVCMOS and HVMAPS collaborations.We have proposed two sensor concepts for pixelsthe capacitive coupled pixel detector (CCPD) monolithic detector.The sensors been implemented in three semiconductor processes AMS H18, H35 LFoundry LFA15.Efficiency 99.7% after neutron irradiation to 10 15 n eq /cm 2 has measured with small area CCPD prototype H18 technology.About 84% particles are detected a time resolution better than 25 ns.The on...
The LHC luminosity upgrade, known as the High Luminosity (HL-LHC), will require replacement of existing silicon strip tracker and transistion radiation tracker. Although a baseline design for this exists ATLAS collaboration other non-ATLAS groups are exploring feasibility using CMOS Monolithic Active Pixel Sensors (MAPS) which would be arranged in strip-like fashion take advantage service support structure already being developed upgrade. Two test devices made with AMS H35 process (a voltage...
High-Voltage CMOS (HVCMOS) pixel sensors are depleted active implemented in standard commercial processes. HVCMOS will be used, or proposed, for several experiments: Mu3e, ATLAS, CLIC. Thanks to charge collection with a high electric field, have potentially very time resolution. The resolution is limited by the rise of amplifier. In this article, means enhancement described: A compensation method shifting detection depending on signal height, an enhanced comparator - walk compensating and...
ATLASpix3 is a 2×2 cm$^2$ high voltage CMOS sensor chip designed to meet the specifications of outer layers ATLAS inner tracker. It compatible with hybrid pixel ASIC RD53A in terms electronic interface and geometry. depleted monolithic detector which allows construction quad modules same size as that sensors. The readout scheme can be externally configured triggered or triggerless column drain readout. hit information transmitted through 1.28 Gbit/s serial link. based on single command input...